SiO/sub 2/ film formation and electrical properties of InP MIS structures

Abstract

The purpose of this work is to investigate the influence of the SiO2film deposition conditions on the charge properties of the Me-SiOrn-InP (100) MIS sr'ructures. SiO2Jilms have been formed on n-type InP (100) substrates (N = 10'6-1'0'7 ~ m ~ ) by chemical vapor deposition (CVD) using pyrolysis of telraethoxysilane (TKOs) in an 02/N2flow at the 30O-35O0C. The deposition rate was 10-200 n , d h . It is shown that the efective surface state charge Qss and hysteresis of C-V characteristics in the MIS structures to a large extent depend on the SiO2filnz dkposition rate. In the MIS structures treated in the (iVH4)2Sx solulion the lowest Qss (SlO" cm-t), Ni, (-10" cm"eV') and C-V hysteresis (<0.3 were obtained at th(e d,, = 70 nm and the 130 nndh deposition rate.