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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)最新文献

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2d-modeling of exclusion effect in the base of semiconductor device 半导体器件基底排斥效应的二维建模
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730198
V. Malyutenko, V. Borblik, A. Klimov
{"title":"2d-modeling of exclusion effect in the base of semiconductor device","authors":"V. Malyutenko, V. Borblik, A. Klimov","doi":"10.1109/ASDAM.1998.730198","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730198","url":null,"abstract":"By means of direct numerical solution of 2-dimensional transport equations an influence of surface generation-recombination on exclusion effect is investigated. Both nonsymmetric p/sup +///spl pi//sup -/ and symmetric p/sup +//spl pi/p/sup +/-structures are considered. Generation of added carriers at the side surfaces of /spl pi/-base moderates noticeably exclusion effect and increases current value. As a result of transversal inhomogeneity of the voltage drop across reverse biased p/sup +//spl pi/-junction the peaks of electric field appear near the junction.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115138749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mid-infrared LEDs using InAs/sub 0.71/Sb/sub 0.29//InAs/Al/sub 0.25/In/sub 0.75/As/InAs strained-layer superlattice active layers 中红外led采用InAs/sub 0.71/Sb/sub 0.29/ InAs/Al/sub 0.25/In/sub 0.75/As/InAs应变层超晶格有源层
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730219
C. van Hoof, S. Németh, B. Grieten, K. Dessein, Jan Genoe, P. Merken, G. Borghs, F. Fuchs, J. Wagner
{"title":"Mid-infrared LEDs using InAs/sub 0.71/Sb/sub 0.29//InAs/Al/sub 0.25/In/sub 0.75/As/InAs strained-layer superlattice active layers","authors":"C. van Hoof, S. Németh, B. Grieten, K. Dessein, Jan Genoe, P. Merken, G. Borghs, F. Fuchs, J. Wagner","doi":"10.1109/ASDAM.1998.730219","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730219","url":null,"abstract":"The use of strained-layer superlattice is a well-established technique to lower Auger recombination in the active layer of mid-IR LEDs and laser. We have shown by temperature-dependent photoluminescence experiments the Auger recombination can be further reduced by incorporating InAs spacer layer inside symmetrically-strained InAsSb/InAlAs superlattices and that the thickness of the spacer is critical for the improved operation. The layer were grown by molecular beam epitaxy on [001] InAs substrates. The crystalline quality of the grown superlattices is demonstrated by means of transmission electron microscopy, atomic force microscopy and X-ray diffraction measurement.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130300223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modelling the living cell-microelectronic antenna combination: role of the causal feedback 活细胞-微电子天线组合的建模:因果反馈的作用
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730234
F. Šrobár, J. Pokomý
{"title":"Modelling the living cell-microelectronic antenna combination: role of the causal feedback","authors":"F. Šrobár, J. Pokomý","doi":"10.1109/ASDAM.1998.730234","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730234","url":null,"abstract":"The paper addresses a post-information technology topic. Vibrating polar macromolecules present with in the confining membrane and in the interior of biological cells function as emitters of electromagnetic field covering a broad frequency spectrum. Sustained oscillation can be fuelled by intracellular metabolic source. The phenomenon was modelled by Frohlich in the form of rate equation for the oscillator occupation number. Diagrammatic analysis is applied on these equations to reveal the presence of feedback mechanism. The mathematical formulism associated with the diagrams affords quantitative evaluation of the feedback effects. This constitutes an important factor in the characterisation of the cell as a source whose radiation is to be detected by a planar microelectrode chip functioning as a receiving antenna.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122719441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A contribution to electrochemical C-V measurements on GaAs/GaAlAs multilayer structures GaAs/GaAlAs多层结构的电化学C-V测量
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730202
R. Kinder, Á. Nemcsics, R. Harman, F. Riesz, B. Pécz
{"title":"A contribution to electrochemical C-V measurements on GaAs/GaAlAs multilayer structures","authors":"R. Kinder, Á. Nemcsics, R. Harman, F. Riesz, B. Pécz","doi":"10.1109/ASDAM.1998.730202","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730202","url":null,"abstract":"GaAs/GaAlAs multilayer structures are investigated by ECV technique on this paper. Two different MBE sample were used for investigation. The sample have a GaAs/GaAlAs junction. One sample is a HBT structure, the other one is a p-i-n photodiode structure. The multilayer structures were tested with different aqueous electrolytes and the ECV results were controlled by SR and TEM measurement, too.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129723318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bi- and Yb-doped GaAs-AlGaAs low-threshold laser heterostructures with quantum well active layers 具有量子阱活性层的双镱掺杂GaAs-AlGaAs低阈值激光异质结构
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730171
S. Krukovsky
{"title":"Bi- and Yb-doped GaAs-AlGaAs low-threshold laser heterostructures with quantum well active layers","authors":"S. Krukovsky","doi":"10.1109/ASDAM.1998.730171","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730171","url":null,"abstract":"This work considers the experimental and calculated results concerning the LPE crystallization of GaAs, AlGaAs layers (10-30 nm) from Ga-Bi-melts at the temperature of 500-700/spl deg/C. Bi being an isovalent impurity decreased the growth rate of GaAs layer to 0.01-0.1 nm/s and, at the same time, it deletes background impurities from a melt. When active layers of Al/sub x/Ga/sub 1-X/As heterolaser (x=0.02-0.15) were doped by Yb and Bi it has been revealed that the conductivity inversion point is shifted towards lower concentration of Yb in a melt. Thus the low temperature LPE method and doping an active layer (Bi) allow the fabrication of low threshold injection semiconductor heterolaser.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121128487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photo-electrical properties of thin ZnO:Al films ZnO:Al薄膜的光电性能
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730168
D. Donoval, F. Uherek, B. Rheinlander
{"title":"Photo-electrical properties of thin ZnO:Al films","authors":"D. Donoval, F. Uherek, B. Rheinlander","doi":"10.1109/ASDAM.1998.730168","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730168","url":null,"abstract":"Photo-electrical properties of ZnO and ZnO:Al thin film prepared by rf sputtering are investigated. The prepared samples exhibit a very wide change of sheet resistance within ten orders of magnitude depending on preparation procedure. A low value of doping independent mobility has been observed. An optical band gap shift towards higher energies is presented.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121218039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin film microelectrodes applicable in the study of red blood cell sedimentation by impedance method 应用阻抗法研究红细胞沉降的薄膜微电极
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730213
R. Záhorec, G. Krausko, V. Tvarozek, I. Novotný, V. Rehacek
{"title":"Thin film microelectrodes applicable in the study of red blood cell sedimentation by impedance method","authors":"R. Záhorec, G. Krausko, V. Tvarozek, I. Novotný, V. Rehacek","doi":"10.1109/ASDAM.1998.730213","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730213","url":null,"abstract":"Thin-film interdigitated array of microelectrodes was used for study of the red blood cell sedimentation by impedance method. An improvement of that method is presented by the determination of a change of impedance rate with time. That dynamic parameter is different for the blood of healthy and cancer patients.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126660987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a tunable RCE photodetector for the 1550 nm wavelength range 1550nm波长范围可调谐RCE光电探测器的设计
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730179
J. Borgulová, B. Rheinlander, J. Kovác, F. Uherek, L. Kuna
{"title":"Design of a tunable RCE photodetector for the 1550 nm wavelength range","authors":"J. Borgulová, B. Rheinlander, J. Kovác, F. Uherek, L. Kuna","doi":"10.1109/ASDAM.1998.730179","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730179","url":null,"abstract":"We present the design of a InGaAs/InP tunable RCE photodetector for the wavelength of 1550 nm. A coupled resonator with two Bragg mirrors has been used to get a broader resonator mode, so that the whole tuning range is enhanced by the cavity. The conditions for the efficient operation of a highly selective tunable photodetector are discussed.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127878097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Radiation effects in surface-barrier Ir-Al/n-GaAs structures 表面势垒Ir-Al/n-GaAs结构中的辐射效应
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730206
A. Belyaev, R. Konakova, V. V. Milenin, J. Breza, T. Lalinsky
{"title":"Radiation effects in surface-barrier Ir-Al/n-GaAs structures","authors":"A. Belyaev, R. Konakova, V. V. Milenin, J. Breza, T. Lalinsky","doi":"10.1109/ASDAM.1998.730206","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730206","url":null,"abstract":"The changes in electrical properties extracted from I-V and C-V measurements, of Ir-Al/n-GaAs barrier contacts caused by gamma-radiation were studied. Non-monotonic dose dependences of the Schottky barrier height, ideality factor, surface state density, and relative thickness of the interfacial layer were observed. Such a non-monotonic behaviour might be attributed to radiation-induced gettering of structural defects and to the mass transfer in both the sub-surface layer and inter-phase boundary.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128802898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Al-Dy/sub x/O/sub y/-n-InP [100] structure preparation and properties Al-Dy/sub x/O/sub y/-n-InP[100]结构制备及性能研究
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730174
N. Babushkina, S. Malyshev, L. Romanova
{"title":"Al-Dy/sub x/O/sub y/-n-InP [100] structure preparation and properties","authors":"N. Babushkina, S. Malyshev, L. Romanova","doi":"10.1109/ASDAM.1998.730174","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730174","url":null,"abstract":"Al-Dy/sub x/O/sub y/-n-InP structures with dysprosium oxide film prepared by two different methods have been studied. The Dy/sub x/O/sub y/ films with 40-120 nm thickness have obtained by Dy thermal evaporation in the O/sub 2/ environment (I) or in the vacuum (II) followed by thermal oxidation at 330-350/spl deg/C in a dry oxygen stream. It follows for analysis of the experiments that the breakdown field in the Al-Dy/sub x/O/sub y/(I)-n-InP structure E/sub br/ is 2.5/spl times/10/sup 6/ V/cm, the effective positive surface charge Q/sub ss/ is /spl sim/3/spl times/10/sup 11/ cm/sup -2/ and the surface state density N/sub it/ is 5/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/. The C-V characteristics hysteresis is of injection type with the magnitude less than 0.3 V. The Al-Dy/sub x/O/sub y/ (II)-n-InP structure has surface charge magnitude Q/sub ss/ about /spl plusmn/1/spl times/10/sup 11/ cm/sup -2/ surface state density N/sub it//spl sim/1/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/, ionic type hysteresis 1-3 V and E/sub br//spl sim/5/spl times/10/sup 6/.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116784019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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