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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)最新文献

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2d-modeling of exclusion effect in the base of semiconductor device 半导体器件基底排斥效应的二维建模
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730198
V. Malyutenko, V. Borblik, A. Klimov
{"title":"2d-modeling of exclusion effect in the base of semiconductor device","authors":"V. Malyutenko, V. Borblik, A. Klimov","doi":"10.1109/ASDAM.1998.730198","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730198","url":null,"abstract":"By means of direct numerical solution of 2-dimensional transport equations an influence of surface generation-recombination on exclusion effect is investigated. Both nonsymmetric p/sup +///spl pi//sup -/ and symmetric p/sup +//spl pi/p/sup +/-structures are considered. Generation of added carriers at the side surfaces of /spl pi/-base moderates noticeably exclusion effect and increases current value. As a result of transversal inhomogeneity of the voltage drop across reverse biased p/sup +//spl pi/-junction the peaks of electric field appear near the junction.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115138749","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Mid-infrared LEDs using InAs/sub 0.71/Sb/sub 0.29//InAs/Al/sub 0.25/In/sub 0.75/As/InAs strained-layer superlattice active layers 中红外led采用InAs/sub 0.71/Sb/sub 0.29/ InAs/Al/sub 0.25/In/sub 0.75/As/InAs应变层超晶格有源层
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730219
C. van Hoof, S. Németh, B. Grieten, K. Dessein, Jan Genoe, P. Merken, G. Borghs, F. Fuchs, J. Wagner
{"title":"Mid-infrared LEDs using InAs/sub 0.71/Sb/sub 0.29//InAs/Al/sub 0.25/In/sub 0.75/As/InAs strained-layer superlattice active layers","authors":"C. van Hoof, S. Németh, B. Grieten, K. Dessein, Jan Genoe, P. Merken, G. Borghs, F. Fuchs, J. Wagner","doi":"10.1109/ASDAM.1998.730219","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730219","url":null,"abstract":"The use of strained-layer superlattice is a well-established technique to lower Auger recombination in the active layer of mid-IR LEDs and laser. We have shown by temperature-dependent photoluminescence experiments the Auger recombination can be further reduced by incorporating InAs spacer layer inside symmetrically-strained InAsSb/InAlAs superlattices and that the thickness of the spacer is critical for the improved operation. The layer were grown by molecular beam epitaxy on [001] InAs substrates. The crystalline quality of the grown superlattices is demonstrated by means of transmission electron microscopy, atomic force microscopy and X-ray diffraction measurement.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"51 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130300223","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation and analysis of the electromagnetic behavior of 3D-MCM carried structures by means of investigations on symmetric folded microstrip filters 通过对对称折叠微带滤波器的研究，对3D-MCM承载结构的电磁行为进行了仿真分析
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730180
P. Philippov, M. Gospodinova, R. Arnaudov, A. Andonova, A. Tzvetkova
{"title":"Simulation and analysis of the electromagnetic behavior of 3D-MCM carried structures by means of investigations on symmetric folded microstrip filters","authors":"P. Philippov, M. Gospodinova, R. Arnaudov, A. Andonova, A. Tzvetkova","doi":"10.1109/ASDAM.1998.730180","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730180","url":null,"abstract":"Simulation and analysis of the electromagnetic behavior of 3D-MCM (multichip module) carrier structures by means of investigation on symmetric folded microstrip filters realised on their basis is proposed in the present paper. The technology for building multilayer high-speed MCM structures, based on Al carriers enables the development of multiple and multilayered interconnections combined with thin film integrated passive components-resistors and MIM capacitors-embedded in the whole structure. In order to study these material systems of interconnections, constructions of multilevel folded symmetric microstrip filters for 1.7 GHz were developed. An electromagnetic simulation of the various filter constructions was performed. RF measurements by means of a vector analyzer were carried out and compared with the simulated characteristics. The obtained measurement and simulation results were used to study successfully the electromagnetic characteristic as well as the parasitic high-frequency effect of interconnection, in order to achieve a reliable practical realisation of high rate production quality.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"443 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134303471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Constant current breakdown in thin SiO/sub 2/ films SiO/sub /薄膜的恒流击穿
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730154
S. Okhonin, P. Fazan
{"title":"Constant current breakdown in thin SiO/sub 2/ films","authors":"S. Okhonin, P. Fazan","doi":"10.1109/ASDAM.1998.730154","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730154","url":null,"abstract":"This paper shows that, in thin silicon dioxide films, the charge to breakdown distribution can have two origins. It can be related to the oxide thickness variation across the wafer or to the statistical nature of the breakdown event. The oxide non uniformity is a major factor in the case of stress-induced-bulk-charge enhanced breakdown. We also demonstrate that the stress-induced-hole current increase has to be considered to ensure the correct oxide life time prediction.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133866793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Al-Dy/sub x/O/sub y/-n-InP [100] structure preparation and properties Al-Dy/sub x/O/sub y/-n-InP[100]结构制备及性能研究
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730174
N. Babushkina, S. Malyshev, L. Romanova
{"title":"Al-Dy/sub x/O/sub y/-n-InP [100] structure preparation and properties","authors":"N. Babushkina, S. Malyshev, L. Romanova","doi":"10.1109/ASDAM.1998.730174","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730174","url":null,"abstract":"Al-Dy/sub x/O/sub y/-n-InP structures with dysprosium oxide film prepared by two different methods have been studied. The Dy/sub x/O/sub y/ films with 40-120 nm thickness have obtained by Dy thermal evaporation in the O/sub 2/ environment (I) or in the vacuum (II) followed by thermal oxidation at 330-350/spl deg/C in a dry oxygen stream. It follows for analysis of the experiments that the breakdown field in the Al-Dy/sub x/O/sub y/(I)-n-InP structure E/sub br/ is 2.5/spl times/10/sup 6/ V/cm, the effective positive surface charge Q/sub ss/ is /spl sim/3/spl times/10/sup 11/ cm/sup -2/ and the surface state density N/sub it/ is 5/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/. The C-V characteristics hysteresis is of injection type with the magnitude less than 0.3 V. The Al-Dy/sub x/O/sub y/ (II)-n-InP structure has surface charge magnitude Q/sub ss/ about /spl plusmn/1/spl times/10/sup 11/ cm/sup -2/ surface state density N/sub it//spl sim/1/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/, ionic type hysteresis 1-3 V and E/sub br//spl sim/5/spl times/10/sup 6/.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"61 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116784019","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photo-electrical properties of thin ZnO:Al films ZnO:Al薄膜的光电性能
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730168
D. Donoval, F. Uherek, B. Rheinlander
{"title":"Photo-electrical properties of thin ZnO:Al films","authors":"D. Donoval, F. Uherek, B. Rheinlander","doi":"10.1109/ASDAM.1998.730168","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730168","url":null,"abstract":"Photo-electrical properties of ZnO and ZnO:Al thin film prepared by rf sputtering are investigated. The prepared samples exhibit a very wide change of sheet resistance within ten orders of magnitude depending on preparation procedure. A low value of doping independent mobility has been observed. An optical band gap shift towards higher energies is presented.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121218039","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Radiation effects in surface-barrier Ir-Al/n-GaAs structures 表面势垒Ir-Al/n-GaAs结构中的辐射效应
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730206
A. Belyaev, R. Konakova, V. V. Milenin, J. Breza, T. Lalinsky
{"title":"Radiation effects in surface-barrier Ir-Al/n-GaAs structures","authors":"A. Belyaev, R. Konakova, V. V. Milenin, J. Breza, T. Lalinsky","doi":"10.1109/ASDAM.1998.730206","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730206","url":null,"abstract":"The changes in electrical properties extracted from I-V and C-V measurements, of Ir-Al/n-GaAs barrier contacts caused by gamma-radiation were studied. Non-monotonic dose dependences of the Schottky barrier height, ideality factor, surface state density, and relative thickness of the interfacial layer were observed. Such a non-monotonic behaviour might be attributed to radiation-induced gettering of structural defects and to the mass transfer in both the sub-surface layer and inter-phase boundary.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"40 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128802898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
MOVPE growth and characterisation of (Al,Ga)N layers (Al,Ga)N层的MOVPE生长与表征
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730166
R. Paszkiewiczt, R. Korbutowicz, D. Radziewicz, M. Panek, B. Paszkiewicz, J. Kozlowski, B. Boratyński, M. Tlaczala
{"title":"MOVPE growth and characterisation of (Al,Ga)N layers","authors":"R. Paszkiewiczt, R. Korbutowicz, D. Radziewicz, M. Panek, B. Paszkiewicz, J. Kozlowski, B. Boratyński, M. Tlaczala","doi":"10.1109/ASDAM.1998.730166","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730166","url":null,"abstract":"The group III nitrides are promising materials for optoelectronic devices high temperature electronics and high power microwave devices. At the moment, MOVPE (Metalorganic Vapour Phase Epitaxy) seems to be the most successful and the most promising method and /spl alpha/ sapphire is believed to be the best substrate for GaN deposition. The paper presents the achievements in (Al,Ga)N deposition at the Institute of Microsystem Technology, Wroclaw University of Technology. The correlation between structural, optical and electrical properties of thick undoped high temperature GaN buffer layer and thin undoped AlGaN spacer layer grown on it are shown and discussed.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128354351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A contribution to electrochemical C-V measurements on GaAs/GaAlAs multilayer structures GaAs/GaAlAs多层结构的电化学C-V测量
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730202
R. Kinder, Á. Nemcsics, R. Harman, F. Riesz, B. Pécz
{"title":"A contribution to electrochemical C-V measurements on GaAs/GaAlAs multilayer structures","authors":"R. Kinder, Á. Nemcsics, R. Harman, F. Riesz, B. Pécz","doi":"10.1109/ASDAM.1998.730202","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730202","url":null,"abstract":"GaAs/GaAlAs multilayer structures are investigated by ECV technique on this paper. Two different MBE sample were used for investigation. The sample have a GaAs/GaAlAs junction. One sample is a HBT structure, the other one is a p-i-n photodiode structure. The multilayer structures were tested with different aqueous electrolytes and the ECV results were controlled by SR and TEM measurement, too.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129723318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin film microelectrodes applicable in the study of red blood cell sedimentation by impedance method 应用阻抗法研究红细胞沉降的薄膜微电极
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730213
R. Záhorec, G. Krausko, V. Tvarozek, I. Novotný, V. Rehacek
{"title":"Thin film microelectrodes applicable in the study of red blood cell sedimentation by impedance method","authors":"R. Záhorec, G. Krausko, V. Tvarozek, I. Novotný, V. Rehacek","doi":"10.1109/ASDAM.1998.730213","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730213","url":null,"abstract":"Thin-film interdigitated array of microelectrodes was used for study of the red blood cell sedimentation by impedance method. An improvement of that method is presented by the determination of a change of impedance rate with time. That dynamic parameter is different for the blood of healthy and cancer patients.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126660987","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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