2d-modeling of exclusion effect in the base of semiconductor device

By means of direct numerical solution of 2-dimensional transport equations an influence of surface generation-recombination on exclusion effect is investigated. Both nonsymmetric p/sup +///spl pi//sup -/ and symmetric p/sup +//spl pi/p/sup +/-structures are considered. Generation of added carriers at the side surfaces of /spl pi/-base moderates noticeably exclusion effect and increases current value. As a result of transversal inhomogeneity of the voltage drop across reverse biased p/sup +//spl pi/-junction the peaks of electric field appear near the junction.