Radiation effects in surface-barrier Ir-Al/n-GaAs structures

Abstract

The changes in electrical properties extracted from I-V and C-V measurements, of Ir-Al/n-GaAs barrier contacts caused by gamma-radiation were studied. Non-monotonic dose dependences of the Schottky barrier height, ideality factor, surface state density, and relative thickness of the interfacial layer were observed. Such a non-monotonic behaviour might be attributed to radiation-induced gettering of structural defects and to the mass transfer in both the sub-surface layer and inter-phase boundary.