GaAs/GaAlAs多层结构的电化学C-V测量

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730202

R. Kinder, Á. Nemcsics, R. Harman, F. Riesz, B. Pécz

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引用次数: 0

摘要

本文采用ECV技术研究了GaAs/GaAlAs多层结构。使用两种不同的MBE样本进行调查。样品具有GaAs/GaAlAs结。一个样品是HBT结构，另一个样品是p-i-n光电二极管结构。用不同的水溶液对多层结构进行了测试，并通过SR和TEM测量控制了ECV结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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A contribution to electrochemical C-V measurements on GaAs/GaAlAs multilayer structures

GaAs/GaAlAs multilayer structures are investigated by ECV technique on this paper. Two different MBE sample were used for investigation. The sample have a GaAs/GaAlAs junction. One sample is a HBT structure, the other one is a p-i-n photodiode structure. The multilayer structures were tested with different aqueous electrolytes and the ECV results were controlled by SR and TEM measurement, too.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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