Al-Dy/sub x/O/sub y/-n-InP[100]结构制备及性能研究

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730174

N. Babushkina, S. Malyshev, L. Romanova

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引用次数: 0

摘要

用两种不同的方法制备了Al-Dy/sub x/O/sub y/-n-InP结构的氧化镝膜。Dy/sub x/O/sub y/薄膜在O/sub 2/环境(I)或真空(II)中热蒸发，然后在330-350/spl℃的干氧流中热氧化，得到了厚度为40- 120nm的Dy/sub x/O/sub y/薄膜。通过实验分析可知，Al-Dy/sub x/O/sub y/(I)-n-InP结构E/sub br/的击穿场为2.5/spl倍/10/sup 6/ V/cm，有效表面正电荷Q/sub ss/为/spl /3/spl倍/10/sup 11/ cm/sup -2/ eV/sup -1/，表面态密度N/sub It /为5/spl倍/10/sup 11/ cm/sup -2/ eV/sup -1/。C-V特性迟滞为注入型，迟滞幅度小于0.3 V。Al-Dy/sub x/O/sub y/ (II)-n-InP结构的表面电荷量级为Q/sub ss/约/spl plusmn/1/spl倍/10/sup 11/ cm/sup -2/ eV/sup -1/，表面态密度为N/sub it//spl sim/1/spl倍/10/sup 11/ cm/sup -2/ eV/sup -1/，离子型迟滞1-3 V和E/sub br//spl sim/5/spl倍/10/sup 6/。

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Al-Dy/sub x/O/sub y/-n-InP [100] structure preparation and properties

Al-Dy/sub x/O/sub y/-n-InP structures with dysprosium oxide film prepared by two different methods have been studied. The Dy/sub x/O/sub y/ films with 40-120 nm thickness have obtained by Dy thermal evaporation in the O/sub 2/ environment (I) or in the vacuum (II) followed by thermal oxidation at 330-350/spl deg/C in a dry oxygen stream. It follows for analysis of the experiments that the breakdown field in the Al-Dy/sub x/O/sub y/(I)-n-InP structure E/sub br/ is 2.5/spl times/10/sup 6/ V/cm, the effective positive surface charge Q/sub ss/ is /spl sim/3/spl times/10/sup 11/ cm/sup -2/ and the surface state density N/sub it/ is 5/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/. The C-V characteristics hysteresis is of injection type with the magnitude less than 0.3 V. The Al-Dy/sub x/O/sub y/ (II)-n-InP structure has surface charge magnitude Q/sub ss/ about /spl plusmn/1/spl times/10/sup 11/ cm/sup -2/ surface state density N/sub it//spl sim/1/spl times/10/sup 11/ cm/sup -2/ eV/sup -1/, ionic type hysteresis 1-3 V and E/sub br//spl sim/5/spl times/10/sup 6/.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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