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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)最新文献

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Modelling the living cell-microelectronic antenna combination: role of the causal feedback 活细胞-微电子天线组合的建模:因果反馈的作用
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730234
F. Šrobár, J. Pokomý
{"title":"Modelling the living cell-microelectronic antenna combination: role of the causal feedback","authors":"F. Šrobár, J. Pokomý","doi":"10.1109/ASDAM.1998.730234","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730234","url":null,"abstract":"The paper addresses a post-information technology topic. Vibrating polar macromolecules present with in the confining membrane and in the interior of biological cells function as emitters of electromagnetic field covering a broad frequency spectrum. Sustained oscillation can be fuelled by intracellular metabolic source. The phenomenon was modelled by Frohlich in the form of rate equation for the oscillator occupation number. Diagrammatic analysis is applied on these equations to reveal the presence of feedback mechanism. The mathematical formulism associated with the diagrams affords quantitative evaluation of the feedback effects. This constitutes an important factor in the characterisation of the cell as a source whose radiation is to be detected by a planar microelectrode chip functioning as a receiving antenna.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122719441","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Bi- and Yb-doped GaAs-AlGaAs low-threshold laser heterostructures with quantum well active layers 具有量子阱活性层的双镱掺杂GaAs-AlGaAs低阈值激光异质结构
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730171
S. Krukovsky
{"title":"Bi- and Yb-doped GaAs-AlGaAs low-threshold laser heterostructures with quantum well active layers","authors":"S. Krukovsky","doi":"10.1109/ASDAM.1998.730171","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730171","url":null,"abstract":"This work considers the experimental and calculated results concerning the LPE crystallization of GaAs, AlGaAs layers (10-30 nm) from Ga-Bi-melts at the temperature of 500-700/spl deg/C. Bi being an isovalent impurity decreased the growth rate of GaAs layer to 0.01-0.1 nm/s and, at the same time, it deletes background impurities from a melt. When active layers of Al/sub x/Ga/sub 1-X/As heterolaser (x=0.02-0.15) were doped by Yb and Bi it has been revealed that the conductivity inversion point is shifted towards lower concentration of Yb in a melt. Thus the low temperature LPE method and doping an active layer (Bi) allow the fabrication of low threshold injection semiconductor heterolaser.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121128487","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Design of a tunable RCE photodetector for the 1550 nm wavelength range 1550nm波长范围可调谐RCE光电探测器的设计
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730179
J. Borgulová, B. Rheinlander, J. Kovác, F. Uherek, L. Kuna
{"title":"Design of a tunable RCE photodetector for the 1550 nm wavelength range","authors":"J. Borgulová, B. Rheinlander, J. Kovác, F. Uherek, L. Kuna","doi":"10.1109/ASDAM.1998.730179","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730179","url":null,"abstract":"We present the design of a InGaAs/InP tunable RCE photodetector for the wavelength of 1550 nm. A coupled resonator with two Bragg mirrors has been used to get a broader resonator mode, so that the whole tuning range is enhanced by the cavity. The conditions for the efficient operation of a highly selective tunable photodetector are discussed.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127878097","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Processing and characterization of GaAs surface-barrier heterostructures with texturized interface 具有织构化界面的GaAs表面势垒异质结构的制备与表征
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730169
O. Borkovskaya, N. Dmitruk, I. Mamontova, S. Mamykin
{"title":"Processing and characterization of GaAs surface-barrier heterostructures with texturized interface","authors":"O. Borkovskaya, N. Dmitruk, I. Mamontova, S. Mamykin","doi":"10.1109/ASDAM.1998.730169","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730169","url":null,"abstract":"The possibility to control photosensitivity of Au(ITO)/GaAs surface-barrier heterostructure by evaporated processing including texturation and passivation of interface on investigated. The complex method of their characteristic is proposed that included analysis of optical, electrical and photoelectric characteristics of structure. The obtained results allowed to determine the change of optical and recombination parameters of interface caused by investigated processing.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115892028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
T-shaped gate based on poly Si/polyimide supported layers 基于聚硅/聚酰亚胺支撑层的t形栅极
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730194
T. Lalinsky, P. Hrkut, L. Matay, I. Kostic, S. Hascik, P. Hudek
{"title":"T-shaped gate based on poly Si/polyimide supported layers","authors":"T. Lalinsky, P. Hrkut, L. Matay, I. Kostic, S. Hascik, P. Hudek","doi":"10.1109/ASDAM.1998.730194","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730194","url":null,"abstract":"A novel poly Si/polyimide dielectric bilayer system was designed to form a T-shaped gate on GaAs substrate using a two-step direct writing electron-beam lithography in combination with a selective reactive ion etching technique. Excellent breakdown properties and thermal stability of the supported polyimide layer were found also to be used for passivation of GaAs based T-shaped gate HFETs.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115561665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultrahigh Al Schottky barrier to p-Si p-Si的超高Al - Schottky势垒
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730172
Z. Horváth, M. Ádám, V. Van Tuyen, C. Ducso
{"title":"Ultrahigh Al Schottky barrier to p-Si","authors":"Z. Horváth, M. Ádám, V. Van Tuyen, C. Ducso","doi":"10.1109/ASDAM.1998.730172","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730172","url":null,"abstract":"The possibility of barrier height enhancement of Schottky junction on p-type Si was studied by using a chemical passivation procedure. Schottky barrier heights up to 0.91 eV have been obtained, due probably to the unpinning of the Fermi-level at the Al/Si interface. It is probably the highest barrier height value published so far for a solid-state Schottky junction prepared on p-Si.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115689783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Capacitive detection in thin film chemical sensors and biosensors 薄膜化学传感器和生物传感器中的电容检测
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730212
V. Rehacek, I. Novotný, V. Tvarozek, M. Riepl, T. Hirsch, M. Mass, R. Schweiss, V. Mirsky, O. Wolfbeis
{"title":"Capacitive detection in thin film chemical sensors and biosensors","authors":"V. Rehacek, I. Novotný, V. Tvarozek, M. Riepl, T. Hirsch, M. Mass, R. Schweiss, V. Mirsky, O. Wolfbeis","doi":"10.1109/ASDAM.1998.730212","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730212","url":null,"abstract":"Thin film electrode chips on silicon substrate have been realized and utilized in development of different chemo- and biosensors. These affinity sensors are based on capacitive transducing and their general structure is thin film Au/alkanethiol/receptor. Several applications of thin film gold electrodes in capacitive sensors are presented.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127722344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP 具有肖特基势垒的同型异质结构Pd-p-InP/p-InGaAs/p-InP的光电性质
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730170
E. Rusu, S.V. Slobodchikov, H.M. Salikhov, M. Turcu
{"title":"Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP","authors":"E. Rusu, S.V. Slobodchikov, H.M. Salikhov, M. Turcu","doi":"10.1109/ASDAM.1998.730170","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730170","url":null,"abstract":"The electrical and photoelectrical characteristics of the isotype p-InP/p-InGaAs heterostructure with the Pd-p-InP Schottky barrier as well as the impact of 500 ppm H/sub 2/ atmosphere on these characteristics have been studied. The main change of photo-emf in the gas environment was found to be around /spl lambda/(max)/sup 1/=0.90 /spl mu/m in the Schottky diode photoresponse spectrum. This behaviour is determined by the change of interface properties and existence of deep level traps in the band gap of the InP layer.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126054121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Speed and efficiency of the PIN homojunction photodiodes on InGaAs/InP heterostructures InGaAs/InP异质结构上PIN同结光电二极管的速度和效率
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730173
E. Budianu, M. Purica, E. Rusu, S. Nan
{"title":"Speed and efficiency of the PIN homojunction photodiodes on InGaAs/InP heterostructures","authors":"E. Budianu, M. Purica, E. Rusu, S. Nan","doi":"10.1109/ASDAM.1998.730173","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730173","url":null,"abstract":"In this paper we present the optimization of a PIN photodiode on A/sup III/B/sup V/ heterostructure and technological processing for a high speed operation over a large spectral range (0.8-1.6) /spl mu/m. A theoretical analysis was made taking into account the dependence of quantum efficiency and speed of response on epitaxial layers parameters of an InP/In/sub 0.53/Ga/sub 0.47/As/InP photodiode with absorption region separated from the p/sup +/n junction. The optimum values for structure parameters were determined for a quantum efficiency over 85% on 1.3-1.6 /spl mu/m spectral range and for a fast response limited by the junction capacity. The technological processing of this type of structure by Cl-VPE epitaxial growth and Zn diffusion in InP layer led to photodiodes with responsivity of 0.7 A/W at 1.3 /spl mu/m and 0.3 A/W at 0.82 /spl mu/m, a rise time of 150 ps and a capacity of 1.2 pF.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126064403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gas sensors with laser-deposited active layers 激光沉积有源层气体传感器
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730233
F. Vysloužil, V. Myslík, M. Vrňata
{"title":"Gas sensors with laser-deposited active layers","authors":"F. Vysloužil, V. Myslík, M. Vrňata","doi":"10.1109/ASDAM.1998.730233","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730233","url":null,"abstract":"This article is concerned with comparison of the properties of acetonate and oxidic layer prepared using the impulse laser ablation method, and subsequent deposition LAD. Optimal technical conditions were found for preparation of layers suitable for use as chemical sensors. The properties of the deposition layers were studied on the basis of their FTIR spectra and by measuring their electrical conductivity. Changes in the electrical conductivity were evaluated in connection with detection of a reducing atmosphere. The attaining of sensitivity of about 350 for 1000 ppm H/sub 2/ was amongst the best results obtained.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124827608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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