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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)最新文献

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MOVPE growth and characterisation of (Al,Ga)N layers (Al,Ga)N层的MOVPE生长与表征
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730166
R. Paszkiewiczt, R. Korbutowicz, D. Radziewicz, M. Panek, B. Paszkiewicz, J. Kozlowski, B. Boratyński, M. Tlaczala
{"title":"MOVPE growth and characterisation of (Al,Ga)N layers","authors":"R. Paszkiewiczt, R. Korbutowicz, D. Radziewicz, M. Panek, B. Paszkiewicz, J. Kozlowski, B. Boratyński, M. Tlaczala","doi":"10.1109/ASDAM.1998.730166","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730166","url":null,"abstract":"The group III nitrides are promising materials for optoelectronic devices high temperature electronics and high power microwave devices. At the moment, MOVPE (Metalorganic Vapour Phase Epitaxy) seems to be the most successful and the most promising method and /spl alpha/ sapphire is believed to be the best substrate for GaN deposition. The paper presents the achievements in (Al,Ga)N deposition at the Institute of Microsystem Technology, Wroclaw University of Technology. The correlation between structural, optical and electrical properties of thick undoped high temperature GaN buffer layer and thin undoped AlGaN spacer layer grown on it are shown and discussed.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"6 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128354351","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Simulation and analysis of the electromagnetic behavior of 3D-MCM carried structures by means of investigations on symmetric folded microstrip filters 通过对对称折叠微带滤波器的研究，对3D-MCM承载结构的电磁行为进行了仿真分析
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730180
P. Philippov, M. Gospodinova, R. Arnaudov, A. Andonova, A. Tzvetkova
{"title":"Simulation and analysis of the electromagnetic behavior of 3D-MCM carried structures by means of investigations on symmetric folded microstrip filters","authors":"P. Philippov, M. Gospodinova, R. Arnaudov, A. Andonova, A. Tzvetkova","doi":"10.1109/ASDAM.1998.730180","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730180","url":null,"abstract":"Simulation and analysis of the electromagnetic behavior of 3D-MCM (multichip module) carrier structures by means of investigation on symmetric folded microstrip filters realised on their basis is proposed in the present paper. The technology for building multilayer high-speed MCM structures, based on Al carriers enables the development of multiple and multilayered interconnections combined with thin film integrated passive components-resistors and MIM capacitors-embedded in the whole structure. In order to study these material systems of interconnections, constructions of multilevel folded symmetric microstrip filters for 1.7 GHz were developed. An electromagnetic simulation of the various filter constructions was performed. RF measurements by means of a vector analyzer were carried out and compared with the simulated characteristics. The obtained measurement and simulation results were used to study successfully the electromagnetic characteristic as well as the parasitic high-frequency effect of interconnection, in order to achieve a reliable practical realisation of high rate production quality.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"443 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134303471","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Constant current breakdown in thin SiO/sub 2/ films SiO/sub /薄膜的恒流击穿
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730154
S. Okhonin, P. Fazan
{"title":"Constant current breakdown in thin SiO/sub 2/ films","authors":"S. Okhonin, P. Fazan","doi":"10.1109/ASDAM.1998.730154","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730154","url":null,"abstract":"This paper shows that, in thin silicon dioxide films, the charge to breakdown distribution can have two origins. It can be related to the oxide thickness variation across the wafer or to the statistical nature of the breakdown event. The oxide non uniformity is a major factor in the case of stress-induced-bulk-charge enhanced breakdown. We also demonstrate that the stress-induced-hole current increase has to be considered to ensure the correct oxide life time prediction.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"89 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133866793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Processing and characterization of GaAs surface-barrier heterostructures with texturized interface 具有织构化界面的GaAs表面势垒异质结构的制备与表征
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730169
O. Borkovskaya, N. Dmitruk, I. Mamontova, S. Mamykin
{"title":"Processing and characterization of GaAs surface-barrier heterostructures with texturized interface","authors":"O. Borkovskaya, N. Dmitruk, I. Mamontova, S. Mamykin","doi":"10.1109/ASDAM.1998.730169","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730169","url":null,"abstract":"The possibility to control photosensitivity of Au(ITO)/GaAs surface-barrier heterostructure by evaporated processing including texturation and passivation of interface on investigated. The complex method of their characteristic is proposed that included analysis of optical, electrical and photoelectric characteristics of structure. The obtained results allowed to determine the change of optical and recombination parameters of interface caused by investigated processing.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"129 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115892028","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
T-shaped gate based on poly Si/polyimide supported layers 基于聚硅/聚酰亚胺支撑层的t形栅极
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730194
T. Lalinsky, P. Hrkut, L. Matay, I. Kostic, S. Hascik, P. Hudek
{"title":"T-shaped gate based on poly Si/polyimide supported layers","authors":"T. Lalinsky, P. Hrkut, L. Matay, I. Kostic, S. Hascik, P. Hudek","doi":"10.1109/ASDAM.1998.730194","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730194","url":null,"abstract":"A novel poly Si/polyimide dielectric bilayer system was designed to form a T-shaped gate on GaAs substrate using a two-step direct writing electron-beam lithography in combination with a selective reactive ion etching technique. Excellent breakdown properties and thermal stability of the supported polyimide layer were found also to be used for passivation of GaAs based T-shaped gate HFETs.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115561665","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Ultrahigh Al Schottky barrier to p-Si p-Si的超高Al - Schottky势垒
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730172
Z. Horváth, M. Ádám, V. Van Tuyen, C. Ducso
{"title":"Ultrahigh Al Schottky barrier to p-Si","authors":"Z. Horváth, M. Ádám, V. Van Tuyen, C. Ducso","doi":"10.1109/ASDAM.1998.730172","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730172","url":null,"abstract":"The possibility of barrier height enhancement of Schottky junction on p-type Si was studied by using a chemical passivation procedure. Schottky barrier heights up to 0.91 eV have been obtained, due probably to the unpinning of the Fermi-level at the Al/Si interface. It is probably the highest barrier height value published so far for a solid-state Schottky junction prepared on p-Si.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"35 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"115689783","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Capacitive detection in thin film chemical sensors and biosensors 薄膜化学传感器和生物传感器中的电容检测
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730212
V. Rehacek, I. Novotný, V. Tvarozek, M. Riepl, T. Hirsch, M. Mass, R. Schweiss, V. Mirsky, O. Wolfbeis
{"title":"Capacitive detection in thin film chemical sensors and biosensors","authors":"V. Rehacek, I. Novotný, V. Tvarozek, M. Riepl, T. Hirsch, M. Mass, R. Schweiss, V. Mirsky, O. Wolfbeis","doi":"10.1109/ASDAM.1998.730212","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730212","url":null,"abstract":"Thin film electrode chips on silicon substrate have been realized and utilized in development of different chemo- and biosensors. These affinity sensors are based on capacitive transducing and their general structure is thin film Au/alkanethiol/receptor. Several applications of thin film gold electrodes in capacitive sensors are presented.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127722344","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP 具有肖特基势垒的同型异质结构Pd-p-InP/p-InGaAs/p-InP的光电性质
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730170
E. Rusu, S.V. Slobodchikov, H.M. Salikhov, M. Turcu
{"title":"Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP","authors":"E. Rusu, S.V. Slobodchikov, H.M. Salikhov, M. Turcu","doi":"10.1109/ASDAM.1998.730170","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730170","url":null,"abstract":"The electrical and photoelectrical characteristics of the isotype p-InP/p-InGaAs heterostructure with the Pd-p-InP Schottky barrier as well as the impact of 500 ppm H/sub 2/ atmosphere on these characteristics have been studied. The main change of photo-emf in the gas environment was found to be around /spl lambda/(max)/sup 1/=0.90 /spl mu/m in the Schottky diode photoresponse spectrum. This behaviour is determined by the change of interface properties and existence of deep level traps in the band gap of the InP layer.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"29 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126054121","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Speed and efficiency of the PIN homojunction photodiodes on InGaAs/InP heterostructures InGaAs/InP异质结构上PIN同结光电二极管的速度和效率
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730173
E. Budianu, M. Purica, E. Rusu, S. Nan
{"title":"Speed and efficiency of the PIN homojunction photodiodes on InGaAs/InP heterostructures","authors":"E. Budianu, M. Purica, E. Rusu, S. Nan","doi":"10.1109/ASDAM.1998.730173","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730173","url":null,"abstract":"In this paper we present the optimization of a PIN photodiode on A/sup III/B/sup V/ heterostructure and technological processing for a high speed operation over a large spectral range (0.8-1.6) /spl mu/m. A theoretical analysis was made taking into account the dependence of quantum efficiency and speed of response on epitaxial layers parameters of an InP/In/sub 0.53/Ga/sub 0.47/As/InP photodiode with absorption region separated from the p/sup +/n junction. The optimum values for structure parameters were determined for a quantum efficiency over 85% on 1.3-1.6 /spl mu/m spectral range and for a fast response limited by the junction capacity. The technological processing of this type of structure by Cl-VPE epitaxial growth and Zn diffusion in InP layer led to photodiodes with responsivity of 0.7 A/W at 1.3 /spl mu/m and 0.3 A/W at 0.82 /spl mu/m, a rise time of 150 ps and a capacity of 1.2 pF.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126064403","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Gas sensors with laser-deposited active layers 激光沉积有源层气体传感器
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730233
F. Vysloužil, V. Myslík, M. Vrňata
{"title":"Gas sensors with laser-deposited active layers","authors":"F. Vysloužil, V. Myslík, M. Vrňata","doi":"10.1109/ASDAM.1998.730233","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730233","url":null,"abstract":"This article is concerned with comparison of the properties of acetonate and oxidic layer prepared using the impulse laser ablation method, and subsequent deposition LAD. Optimal technical conditions were found for preparation of layers suitable for use as chemical sensors. The properties of the deposition layers were studied on the basis of their FTIR spectra and by measuring their electrical conductivity. Changes in the electrical conductivity were evaluated in connection with detection of a reducing atmosphere. The attaining of sensitivity of about 350 for 1000 ppm H/sub 2/ was amongst the best results obtained.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124827608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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