基于聚硅/聚酰亚胺支撑层的t形栅极

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730194

T. Lalinsky, P. Hrkut, L. Matay, I. Kostic, S. Hascik, P. Hudek

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引用次数: 1

摘要

采用两步直写电子束刻蚀结合选择性反应离子刻蚀技术，设计了一种新型的聚硅/聚酰亚胺介电双层体系，在GaAs衬底上形成t形栅极。负载聚酰亚胺层具有良好的击穿性能和热稳定性，可用于GaAs基t型栅极hfet的钝化。

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T-shaped gate based on poly Si/polyimide supported layers

A novel poly Si/polyimide dielectric bilayer system was designed to form a T-shaped gate on GaAs substrate using a two-step direct writing electron-beam lithography in combination with a selective reactive ion etching technique. Excellent breakdown properties and thermal stability of the supported polyimide layer were found also to be used for passivation of GaAs based T-shaped gate HFETs.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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