具有肖特基势垒的同型异质结构Pd-p-InP/p-InGaAs/p-InP的光电性质

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730170

E. Rusu, S.V. Slobodchikov, H.M. Salikhov, M. Turcu

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引用次数: 0

摘要

研究了具有Pd-p-InP肖特基势垒的同型p-InP/p-InGaAs异质结构的电学和光电特性，以及500 ppm H/sub 2/大气对这些特性的影响。在肖特基二极管光响应谱中，气体环境下光电动势的主要变化在/spl λ /(max)/sup 1/=0.90 /spl mu/m左右。这种行为是由界面性质的变化和InP层带隙中深层陷阱的存在决定的。

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Photoelectrical properties of isotype heterostructure with Schottky barrier Pd-p-InP/p-InGaAs/p-InP

The electrical and photoelectrical characteristics of the isotype p-InP/p-InGaAs heterostructure with the Pd-p-InP Schottky barrier as well as the impact of 500 ppm H/sub 2/ atmosphere on these characteristics have been studied. The main change of photo-emf in the gas environment was found to be around /spl lambda/(max)/sup 1/=0.90 /spl mu/m in the Schottky diode photoresponse spectrum. This behaviour is determined by the change of interface properties and existence of deep level traps in the band gap of the InP layer.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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