p-Si的超高Al - Schottky势垒

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730172

Z. Horváth, M. Ádám, V. Van Tuyen, C. Ducso

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引用次数: 6

摘要

采用化学钝化方法研究了p型硅上肖特基结势垒高度增强的可能性。肖特基势垒高度高达0.91 eV，这可能是由于Al/Si界面上费米能级的解除。这可能是迄今为止发表的p-Si上制备的固态肖特基结的最高势垒高度值。

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Ultrahigh Al Schottky barrier to p-Si

The possibility of barrier height enhancement of Schottky junction on p-type Si was studied by using a chemical passivation procedure. Schottky barrier heights up to 0.91 eV have been obtained, due probably to the unpinning of the Fermi-level at the Al/Si interface. It is probably the highest barrier height value published so far for a solid-state Schottky junction prepared on p-Si.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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