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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)最新文献

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InAs quantum well magnetic sensors with high sensitivity and excellent temperature stability InAs量子阱磁传感器具有高灵敏度和优异的温度稳定性
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730226
M. Behet, J. De Boeck, G. Borghs
{"title":"InAs quantum well magnetic sensors with high sensitivity and excellent temperature stability","authors":"M. Behet, J. De Boeck, G. Borghs","doi":"10.1109/ASDAM.1998.730226","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730226","url":null,"abstract":"This paper reports on the fabrication and characterization of Hall and magnetoresistive sensors with high sensitivity and excellent temperature stability. InAs/AlGaSb quantum well structures grown by molecular beam epitaxy (MBE) on semiinsulating GaAs substrates were used as active layers for magnetic field sensing. The excellent transport properties (electron mobilities up to 28,000 cm/sup 2//Vs at room temperature) resulted in high sensitivity for room temperature operation of magnetoresistors (relative sensitivity: 460%/T to 0.25 T) and Hall elements (sensitivity for current drive: 300 V/A/T, for voltage drive: 0.9 T/sup -1/).","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124868355","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Anomalous angle dependence of the output signal of bipolar magnetic sensors 双极磁传感器输出信号的异常角度依赖性
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730227
C. Roumenin, P. Georgieva, A. Ivanov
{"title":"Anomalous angle dependence of the output signal of bipolar magnetic sensors","authors":"C. Roumenin, P. Georgieva, A. Ivanov","doi":"10.1109/ASDAM.1998.730227","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730227","url":null,"abstract":"An unknown to date anomalous output-signal angle dependence in bipolar silicon magnetic sensors in amperometric mode of operation at low temperatures is discovered and investigated experimentally. This finding is in contrast to the expected sinusoidal behaviour of the output signal. We offer an interpretation based on the nonlinear magnetodiode effect that generates an additional angle-dependent potential and increases the potential barriers of the two directly connected collectors. As a result, angle dependence of the p/sup +/-n junction resistances is observed that modulates the current between the collectors. The absence of the new effect after a certain value of the temperature T/sub 0/, T>T/sub 0/ is due to the decrease of carrier mobility leading to linearity of the galvanomagnetic process in the microsensor.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124245558","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Liquid-phase epitaxial growth of Ga/sub 1-x/InAs/sub y/Sb/sub 1-y/ solid solution using Pb neutral solvent 采用Pb中性溶剂对Ga/sub - 1-x/InAs/sub -y/ Sb/sub - 1-y/固溶体进行液相外延生长
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730165
E.V. Kunitsvna, I. Andreev, N. Charykov, Y. Solov’ev, Yu.P. Yaltovfev
{"title":"Liquid-phase epitaxial growth of Ga/sub 1-x/InAs/sub y/Sb/sub 1-y/ solid solution using Pb neutral solvent","authors":"E.V. Kunitsvna, I. Andreev, N. Charykov, Y. Solov’ev, Yu.P. Yaltovfev","doi":"10.1109/ASDAM.1998.730165","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730165","url":null,"abstract":"Ga/sub 1-x/InAs/sub y/Sb/sub 1-y/ solid solutions make it possible to produce optoelectronic devices for a mid-infrared (IR) spectral range, which is extremely important now for optical fiber communications, ecological monitoring, laser ranging systems and molecular spectroscopy. We propose a method of using lead (Pb) neutral solvent in GaInAsSb LPE-growth process in order to vary the Sb/Ga ratio in the liquid phase beyond the limits of the traditional investigations of melt-solid phase diagrams for the Ga-In-As-Sb-Pb system. As a result of our studies, we have successfully grown for the first time high quality Ga/sub 1-x/In/sub x/As/sub y/Sb/sub 1-x/ layers from the five-component Ga-In-As-Sb-Pb melt with x=0.14-0.17 at T=600/spl deg/C and x=0.18, 0.19 at T=560/spl deg/C.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129780721","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thermal degradation of Al/AlGaAs Schottky junctions Al/AlGaAs肖特基结的热降解
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730182
Z. Horváth, T. Veres, V. Van Tuyen, B. Kovács, A.I.A. Elsawirki, I. Csontos, B. Szentpáli
{"title":"Thermal degradation of Al/AlGaAs Schottky junctions","authors":"Z. Horváth, T. Veres, V. Van Tuyen, B. Kovács, A.I.A. Elsawirki, I. Csontos, B. Szentpáli","doi":"10.1109/ASDAM.1998.730182","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730182","url":null,"abstract":"The thermal degradation of Al/Al/sub 0.20/Ga/sub 0.80/As Schottky junctions was studied up to 750/spl deg/C, by steps of 50/spl deg/C for 2 hours in forming gas. Current-voltage and capacitance-voltage measurements indicated, that the strong degradation of the diode parameters began after the annealing steps of 550/spl deg/C. It was concluded that the degradation was connected with the interaction of the Al metallization with the AlGaAs substrate yielding doping concentration reduction near the interface and increasing the lateral inhomogeneity of the junction.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"59 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133831254","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Thin film resistance temperature sensors on GaAs 砷化镓薄膜电阻温度传感器
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730209
T. Lalinsky, I. Hotovy, S. Hascik, Z. Mozolova, J. Kuzmík, D. Pogany
{"title":"Thin film resistance temperature sensors on GaAs","authors":"T. Lalinsky, I. Hotovy, S. Hascik, Z. Mozolova, J. Kuzmík, D. Pogany","doi":"10.1109/ASDAM.1998.730209","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730209","url":null,"abstract":"Thin film resistance temperature sensors on GaAs has been developed as an alternative replacement to the temperature sensing Schottky diodes in the power sensor microsystem. Current-voltage and low frequency noise measurements of the temperature sensor have been carried out to analyze the sensor performances. Better noise performance of the resistance sensors compared to the Schottky one has been found.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134172989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Capacitance-voltage characterization of MBE- and MOCVD-grown multilayer GaAs microwave FET structures MBE和mocvd生长的多层GaAs微波场效应晶体管结构的电容-电压特性
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730200
M. F. Kokorev, N. Maleev, A.G. Kuumenkov, V. Ustinov, V. Gurtovoi
{"title":"Capacitance-voltage characterization of MBE- and MOCVD-grown multilayer GaAs microwave FET structures","authors":"M. F. Kokorev, N. Maleev, A.G. Kuumenkov, V. Ustinov, V. Gurtovoi","doi":"10.1109/ASDAM.1998.730200","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730200","url":null,"abstract":"Accurate non-destructive characterization of the microwave GaAs FETs is extremely important for the progress of GaAs technology. For the non-uniform doping FET structures the standard CV profiling is not valid. In this work we demonstrate the application of the new CV technique for investigation of different multilayer MBE and MOCVD-grown GaAs structures. Our approach is based on the improved variant of the inverse modelling and shows good accuracy, stability, and convergence. The spatial resolution of the proposed technique may be as high as 1-2 nm. Moreover in the present work we develop non-destructive method for determination of the gate length and the gate capacitance analysis. It is based on the measurements of the C-V characteristics for FETs with different gate size and Schottky diode test structures. The gate recess etching effects are included. The application of the proposed capacitance methods for microwave GaAs FETs optimization are demonstrated.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"17 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122211546","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Extraction of noise parameters for the macromodelling of MEMS MEMS宏观建模中的噪声参数提取
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730223
A. Greiner, J. Korvink
{"title":"Extraction of noise parameters for the macromodelling of MEMS","authors":"A. Greiner, J. Korvink","doi":"10.1109/ASDAM.1998.730223","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730223","url":null,"abstract":"We investigate mechanical noise sources of micromechanical systems. The description of noise in the framework of a correlation function formulation is presented and the influence of different operating conditions on the description of a micromachined cantilever as an example is explained. It turns out that the most interesting operation regime will be found where several different timescales occur due so the reduction of a single dominant dissipation channel which in this case is formed by the molecular motion of the gas as an environmental the cantilever. We expect this transition regime to be governed by several diffraction time-scales of comparable magnitude due to the interaction of the learning degree of freedom.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124672430","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Role of physical parameters of bulk semi-insulating GaAs in detection performance of particle detectors 块状半绝缘砷化镓的物理参数对粒子探测器检测性能的影响
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730230
F. Dubecký, J. Darmo, M. Krempaský, V. Nečas, P. Pelfer, P. Boháček, M. Sekáčová
{"title":"Role of physical parameters of bulk semi-insulating GaAs in detection performance of particle detectors","authors":"F. Dubecký, J. Darmo, M. Krempaský, V. Nečas, P. Pelfer, P. Boháček, M. Sekáčová","doi":"10.1109/ASDAM.1998.730230","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730230","url":null,"abstract":"Study of bulk semi-insulating GaAs by the conductivity, Hall, GDMS, I-V and C-V techniques was used for material and detector characterisation. Detection performances of detectors have been tested using /sup 57/Co source of 122 keV gamma rays. Correlation between the physical properties of based material and performance of detectors is presented and discussed.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"22 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128780008","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Influence of the pinch-off effect on I-V curves of inhomogeneous Schottky diodes 掐断效应对非均匀肖特基二极管I-V曲线的影响
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730185
J. Osvald
{"title":"Influence of the pinch-off effect on I-V curves of inhomogeneous Schottky diodes","authors":"J. Osvald","doi":"10.1109/ASDAM.1998.730185","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730185","url":null,"abstract":"The Poisson equation together with the drift-diffusion equations have been used to simulate both I-V and C-V characteristic of inhomogeneous Schottky diodes. It is shown that the I-V and C-V curves and extracted apparent Schottky diode parameters depend only slightly if at all, on a lateral correlation between the single barrier patches for larger dimension of patches. Very small differences were found between the currents flowing through the diode with large and nanosize inhomogeneities.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"02 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129129079","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Photoluminescent investigation of the effect of ultrasonic treatment upon defect states in M/n-n/sup +/ GaAs (M=Pt,W,Cr) 超声处理对M/n-n/sup +/ GaAs (M=Pt,W,Cr)缺陷态影响的光致发光研究
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730204
I. Ermolovich, R. Konakova, V.V. Milenin, I. Prokopenko, V.L. Gromashevskii
{"title":"Photoluminescent investigation of the effect of ultrasonic treatment upon defect states in M/n-n/sup +/ GaAs (M=Pt,W,Cr)","authors":"I. Ermolovich, R. Konakova, V.V. Milenin, I. Prokopenko, V.L. Gromashevskii","doi":"10.1109/ASDAM.1998.730204","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730204","url":null,"abstract":"The effect of ultrasonic treatment on the physico-chemical, structural, and electrical properties of Pt,Cr,W/n-n/sup +/-GaAs structures has been studied. It is shown that ultrasonic treatment produces spatial and chemical ordering of the contact region of GaAs. This decreases the reverse currents in diode structures with a Schottky barrier. A possible mechanism of the effect of ultrasonic treatment on the structural and chemical reorganization in an M/n-n/sup +/-GaAs contact is discussed.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129633525","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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