Influence of the pinch-off effect on I-V curves of inhomogeneous Schottky diodes

The Poisson equation together with the drift-diffusion equations have been used to simulate both I-V and C-V characteristic of inhomogeneous Schottky diodes. It is shown that the I-V and C-V curves and extracted apparent Schottky diode parameters depend only slightly if at all, on a lateral correlation between the single barrier patches for larger dimension of patches. Very small differences were found between the currents flowing through the diode with large and nanosize inhomogeneities.