Thermal degradation of Al/AlGaAs Schottky junctions

Abstract

The thermal degradation of Al/Al/sub 0.20/Ga/sub 0.80/As Schottky junctions was studied up to 750/spl deg/C, by steps of 50/spl deg/C for 2 hours in forming gas. Current-voltage and capacitance-voltage measurements indicated, that the strong degradation of the diode parameters began after the annealing steps of 550/spl deg/C. It was concluded that the degradation was connected with the interaction of the Al metallization with the AlGaAs substrate yielding doping concentration reduction near the interface and increasing the lateral inhomogeneity of the junction.