超声处理对M/n-n/sup +/ GaAs (M=Pt,W,Cr)缺陷态影响的光致发光研究

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730204

I. Ermolovich, R. Konakova, V.V. Milenin, I. Prokopenko, V.L. Gromashevskii

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引用次数: 0

摘要

研究了超声处理对Pt、Cr、W/n-n/sup +/-GaAs结构的理化、结构和电学性能的影响。结果表明，超声处理能使砷化镓接触区的空间有序和化学有序。这减少了反向电流的二极管结构与肖特基势垒。讨论了超声处理对M/n-n/sup +/-GaAs接触面结构和化学重组影响的可能机理。

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Photoluminescent investigation of the effect of ultrasonic treatment upon defect states in M/n-n/sup +/ GaAs (M=Pt,W,Cr)

The effect of ultrasonic treatment on the physico-chemical, structural, and electrical properties of Pt,Cr,W/n-n/sup +/-GaAs structures has been studied. It is shown that ultrasonic treatment produces spatial and chemical ordering of the contact region of GaAs. This decreases the reverse currents in diode structures with a Schottky barrier. A possible mechanism of the effect of ultrasonic treatment on the structural and chemical reorganization in an M/n-n/sup +/-GaAs contact is discussed.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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