块状半绝缘砷化镓的物理参数对粒子探测器检测性能的影响

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730230

F. Dubecký, J. Darmo, M. Krempaský, V. Nečas, P. Pelfer, P. Boháček, M. Sekáčová

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引用次数: 0

摘要

利用电导率、霍尔、GDMS、I-V和C-V技术对大块半绝缘GaAs进行了材料和探测器表征。利用/sup 57/Co源对122 keV伽马射线的探测性能进行了测试。提出并讨论了基材的物理性质与探测器性能之间的关系。

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Role of physical parameters of bulk semi-insulating GaAs in detection performance of particle detectors

Study of bulk semi-insulating GaAs by the conductivity, Hall, GDMS, I-V and C-V techniques was used for material and detector characterisation. Detection performances of detectors have been tested using /sup 57/Co source of 122 keV gamma rays. Correlation between the physical properties of based material and performance of detectors is presented and discussed.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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