采用Pb中性溶剂对Ga/sub - 1-x/InAs/sub -y/ Sb/sub - 1-y/固溶体进行液相外延生长

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730165

E.V. Kunitsvna, I. Andreev, N. Charykov, Y. Solov’ev, Yu.P. Yaltovfev

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引用次数: 0

摘要

Ga/sub - 1-x/InAs/sub -y/ Sb/sub - 1-y/固体溶液使生产中红外(IR)光谱范围的光电子器件成为可能，这对于光纤通信，生态监测，激光测距系统和分子光谱非常重要。我们提出了一种在GaInAsSb lpe生长过程中使用铅(Pb)中性溶剂的方法，以改变液相中的Sb/Ga比，超越了传统研究Ga- in - as -Sb-Pb体系的熔固相图的限制。研究结果表明，我们首次成功地从五组分Ga-In-As-Sb- pb熔体中生长出高质量的Ga/sub - 1-x/In/sub -x/ As/sub - y/Sb/sub - 1-x/层，温度为600/spl℃时x=0.14-0.17，温度为560/spl℃时x=0.18 - 0.19。

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Liquid-phase epitaxial growth of Ga/sub 1-x/InAs/sub y/Sb/sub 1-y/ solid solution using Pb neutral solvent

Ga/sub 1-x/InAs/sub y/Sb/sub 1-y/ solid solutions make it possible to produce optoelectronic devices for a mid-infrared (IR) spectral range, which is extremely important now for optical fiber communications, ecological monitoring, laser ranging systems and molecular spectroscopy. We propose a method of using lead (Pb) neutral solvent in GaInAsSb LPE-growth process in order to vary the Sb/Ga ratio in the liquid phase beyond the limits of the traditional investigations of melt-solid phase diagrams for the Ga-In-As-Sb-Pb system. As a result of our studies, we have successfully grown for the first time high quality Ga/sub 1-x/In/sub x/As/sub y/Sb/sub 1-x/ layers from the five-component Ga-In-As-Sb-Pb melt with x=0.14-0.17 at T=600/spl deg/C and x=0.18, 0.19 at T=560/spl deg/C.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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