T. Lalinsky, I. Hotovy, S. Hascik, Z. Mozolova, J. Kuzmík, D. Pogany
{"title":"砷化镓薄膜电阻温度传感器","authors":"T. Lalinsky, I. Hotovy, S. Hascik, Z. Mozolova, J. Kuzmík, D. Pogany","doi":"10.1109/ASDAM.1998.730209","DOIUrl":null,"url":null,"abstract":"Thin film resistance temperature sensors on GaAs has been developed as an alternative replacement to the temperature sensing Schottky diodes in the power sensor microsystem. Current-voltage and low frequency noise measurements of the temperature sensor have been carried out to analyze the sensor performances. Better noise performance of the resistance sensors compared to the Schottky one has been found.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"54 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Thin film resistance temperature sensors on GaAs\",\"authors\":\"T. Lalinsky, I. Hotovy, S. Hascik, Z. Mozolova, J. Kuzmík, D. Pogany\",\"doi\":\"10.1109/ASDAM.1998.730209\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Thin film resistance temperature sensors on GaAs has been developed as an alternative replacement to the temperature sensing Schottky diodes in the power sensor microsystem. Current-voltage and low frequency noise measurements of the temperature sensor have been carried out to analyze the sensor performances. Better noise performance of the resistance sensors compared to the Schottky one has been found.\",\"PeriodicalId\":378441,\"journal\":{\"name\":\"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)\",\"volume\":\"54 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.1998.730209\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.1998.730209","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Thin film resistance temperature sensors on GaAs has been developed as an alternative replacement to the temperature sensing Schottky diodes in the power sensor microsystem. Current-voltage and low frequency noise measurements of the temperature sensor have been carried out to analyze the sensor performances. Better noise performance of the resistance sensors compared to the Schottky one has been found.