表面势垒Ir-Al/n-GaAs结构中的辐射效应

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730206

A. Belyaev, R. Konakova, V. V. Milenin, J. Breza, T. Lalinsky

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引用次数: 1

摘要

研究了γ辐射引起的Ir-Al/n-GaAs势垒接触电学性质的变化。观察了肖特基势垒高度、理想因子、表面态密度和界面层相对厚度的非单调剂量依赖性。这种非单调行为可能归因于结构缺陷的辐射诱导的吸积以及次表层和相间边界的传质。

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Radiation effects in surface-barrier Ir-Al/n-GaAs structures

The changes in electrical properties extracted from I-V and C-V measurements, of Ir-Al/n-GaAs barrier contacts caused by gamma-radiation were studied. Non-monotonic dose dependences of the Schottky barrier height, ideality factor, surface state density, and relative thickness of the interfacial layer were observed. Such a non-monotonic behaviour might be attributed to radiation-induced gettering of structural defects and to the mass transfer in both the sub-surface layer and inter-phase boundary.

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来源期刊

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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