On capacitance of (U/sub a/=300 V) ionized cluster beam deposited Pb/p-Si[100] Schottky junction

The room temperature C-V characteristics, exhibiting the distinct maxima around the reverse biased voltage, U/sub r/, of ionized cluster beam deposited (ICB) metal/p-Si[100], metal=Pb and Ag, Schottky junctions, are interpreted in terms of the model of metal/metal-enriched interlayer/p-Si substrate structure. It is shown, that the resultant depletion layer capacitance, C, of such a structure, when derived by incorporating the (assumed biased voltage independent) excess interface charge density, /spl sigma/, in conjunction with the spatially confined deep lying metal impurity levels within the metal enriched semiconductor region, could successfully describe the low frequency C-V data, as measured on these ICB U/sub a/=300 V Schottky junctions.