SIMS characterization of fluorinated SiO/sub 2/ films

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730160

A. Efremov, G. Romanova, V. Litovchenko

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Abstract

SIMS depth profiling of two type of fluorinated SiO film before and after /spl gamma/-irradiation have been performed. Analysis of the experimental data based on previous calibration and theoretical studies allow us to reveal correlation between distribution of bounded fluorine and distribution of other native and induced defects in the oxide film. Comparison of SIMS data with the result of computer simulation of /spl gamma/-irradiation induced processes in SiO/sub 2/:F shows that florine may present in SiO/sub 2/ both in "interstitial" form and may be included in such structural defects as /spl equiv/Si-F...-Si/spl equiv/, /spl equiv/Si-F...O-Si/spl equiv/, /spl equiv/Si-F...H-Si/spl equiv/. Hypothesis about high mobility of fluorine itself, is not supported by calculations. On the contrary, the high mobility of hydrogen is very important in all studied processes. In particular, /spl gamma/-irradiation leads to transfer of hydrogen from SiH complexes to SiOH ones.

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氟化SiO/ sub2 /薄膜的SIMS表征

对两种氟化SiO膜进行了/spl γ /-辐照前后的SIMS深度剖面分析。基于先前校准和理论研究的实验数据分析使我们能够揭示有界氟的分布与氧化膜中其他天然和诱导缺陷的分布之间的相关性。SIMS数据与SiO/ sub2 /:F中/spl γ /-辐照诱导过程的计算机模拟结果比较表明，氟可能以“间隙”形式存在于SiO/ sub2 /:F中，并可能包含在/spl equiv/Si-F等结构缺陷中。-Si/spl equiv/， /spl equiv/Si-F…O-Si/spl equiv/， /spl equiv/Si-F…关于氟本身高迁移率的假设，没有得到计算的支持。相反，氢的高迁移率在所有研究过程中都是非常重要的。特别是，/spl γ /-辐照导致氢从SiH配合物转移到SiOH配合物。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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