溅射粒子输运的蒙特卡罗模拟

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730167

K. Macek, P. Macek, U. Helmersson

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引用次数: 20

摘要

提出了一种用于溅射粒子输运的蒙特卡罗计算模型，该模型可用于估计低压直流磁控管放电中气相溅射物质的密度。在平均靶功率密度为2 W/cm/sup / 2/的条件下，在0.1 Pa氩气条件下对Cu进行直流磁控溅射，结果表明，在大部分放电体积中，Cu的浓度低于1%。讨论了工艺参数对铜相对密度的影响。

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Monte Carlo simulations of the transport of sputtered particles

A model for Monte Carlo calculation of the transport of sputtered particles is presented which allows to estimate the density of sputtered material in the gas phase of a low pressure DC magnetron discharge. Simulation of DC magnetron sputtering of Cu in 0.1 Pa of Ar using an average target power density 2 W/cm/sup 2/ shows that Cu concentration is below 1% in most of the discharge volume. The influence of the process parameters on the relative Cu density is discussed.

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来源期刊

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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