Transition between coherent to incoherent superlattices transport

C. Rauch, G. Strasser, E. Gornik
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引用次数: 0

Abstract

Ballistic electron transport is used to study the transmittance of GaAs/GaAlAs superlattice. In a three terminal transistor type devices an energy tunable electron beam is injected via a tunneling barrier into an undoped superlattice. The transmitted current is measured as function of the injector energy. Resonance in the collector current are observed due to miniband conduction in the GaAs/AlGaAs superlattice. A significant decreased of the miniband transmission is observed with increasing electric field across the superlattice, which is attributed to the the quenching of coherent transport. For longer superlattices an asymmetry between positive and negative bias is found which is assigned to the transition between coherent and incoherent transport.
相干到非相干超晶格之间的跃迁
采用弹道电子输运方法研究了GaAs/GaAlAs超晶格的透射率。在三端晶体管型器件中,能量可调电子束通过隧穿势垒注入未掺杂的超晶格中。传输电流作为注入器能量的函数进行测量。由于GaAs/AlGaAs超晶格中的小带传导,在集电极电流中观察到共振。微带透射率随电场的增大而显著降低,这是由于相干输运的猝灭。对于较长的超晶格,发现了正偏和负偏之间的不对称性,这是由相干和非相干输运之间的跃迁引起的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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