Investigation of semiconductor structures through capacitance techniques

Precise and fast computer-aided measurements, parameters extraction and suitable data visualisation are nowadays necessary for many applications as development, production and quality control of semiconductor devices. In order to investigate such devices as metal-insulator-semiconductor structures, and devices with p-n junction or another rectifying contact an apparatus for high frequency capacitance versus voltage and for capacitance versus time techniques has been designed and constructed by means of these methods one can determine critical parameter for device characterisation.