{"title":"先进CMOS技术的现状和未来——数字和模拟两方面","authors":"H. Iwai","doi":"10.1109/ASDAM.1998.730153","DOIUrl":null,"url":null,"abstract":"CMOS LSIs have achieved a great success for these 15 years as the mainstream of the semiconductor for integrated circuits. The progress has been driven by the downsizing of the components in an LSI such as MOSFETs. However, even before the downsizing of MOSFETs reaches its fundamental limit, the downsizing is expected to encounter severe technological and economic problems at the beginning of next century when the minimum feature size of LSIs is going to shift to 0.1 and sub-0.1 /spl mu/m. In this paper, after the brief introduction of the current status of CMOS technology, the anticipated difficulties and some concepts for 0.1 and sub-0.1 /spl mu/m LSIs are explained based on the research of the downsizing MOSFET into such dimension. Also, some new aspects of CMOS application such as RF CMOS technology for mobile telecommunication is briefly described. Finally, further concept for deep-sub-0.1 /spl mu/m LSIs is explained.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"5 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":"{\"title\":\"Current status and future of advanced CMOS technologies-digital and analog aspect\",\"authors\":\"H. Iwai\",\"doi\":\"10.1109/ASDAM.1998.730153\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"CMOS LSIs have achieved a great success for these 15 years as the mainstream of the semiconductor for integrated circuits. The progress has been driven by the downsizing of the components in an LSI such as MOSFETs. However, even before the downsizing of MOSFETs reaches its fundamental limit, the downsizing is expected to encounter severe technological and economic problems at the beginning of next century when the minimum feature size of LSIs is going to shift to 0.1 and sub-0.1 /spl mu/m. In this paper, after the brief introduction of the current status of CMOS technology, the anticipated difficulties and some concepts for 0.1 and sub-0.1 /spl mu/m LSIs are explained based on the research of the downsizing MOSFET into such dimension. Also, some new aspects of CMOS application such as RF CMOS technology for mobile telecommunication is briefly described. Finally, further concept for deep-sub-0.1 /spl mu/m LSIs is explained.\",\"PeriodicalId\":378441,\"journal\":{\"name\":\"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)\",\"volume\":\"5 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"2\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.1998.730153\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.1998.730153","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Current status and future of advanced CMOS technologies-digital and analog aspect
CMOS LSIs have achieved a great success for these 15 years as the mainstream of the semiconductor for integrated circuits. The progress has been driven by the downsizing of the components in an LSI such as MOSFETs. However, even before the downsizing of MOSFETs reaches its fundamental limit, the downsizing is expected to encounter severe technological and economic problems at the beginning of next century when the minimum feature size of LSIs is going to shift to 0.1 and sub-0.1 /spl mu/m. In this paper, after the brief introduction of the current status of CMOS technology, the anticipated difficulties and some concepts for 0.1 and sub-0.1 /spl mu/m LSIs are explained based on the research of the downsizing MOSFET into such dimension. Also, some new aspects of CMOS application such as RF CMOS technology for mobile telecommunication is briefly described. Finally, further concept for deep-sub-0.1 /spl mu/m LSIs is explained.