转移电子器件大信号动态导纳的数值研究

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730196

M. Suchecka

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引用次数: 0

摘要

本文给出了Gunn二极管频率相关动态导纳的完整表征结果。利用电子输运的漂移和扩散模型，对x波段的Gunn器件进行了基本的大信号模拟。所得结果澄清了葛恩二极管振荡器中出现的许多现象。由于TED运行的物理机制在非常宽的频带中是相似的，因此x波段特性对于规划40ghz以上频带中更复杂的TED模拟非常有用。

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Numerical investigations of the large signal dynamic admittance of the transferred electron devices

In the paper results of the full characterization of the Gunn diode's frequency dependent dynamic admittance have been presented. The base large signal simulation have been performed for the X-band Gunn device, using the drift and diffusion model of electron transport. The presented results clear up many phenomena appearing in the oscillators based on Gunn diodes. Because the physical mechanism of the operation of TED's is similar in a very wide-frequency band, the X-band characterization is useful for planning of more complicated simulations of TED's in the frequency bands above 40 GHz.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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