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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)最新文献

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Resistivity anisotropy and surface morphology in ordered In/sub x/Ga/sub 1-x/P grown at 640/spl deg/C 在640/spl度/C下生长的有序in /sub x/Ga/sub 1-x/P的电阻率各向异性和表面形貌
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730157
J. Novák, S. Hasen, V. Cambel, R. Kúdela, M. Kučera
{"title":"Resistivity anisotropy and surface morphology in ordered In/sub x/Ga/sub 1-x/P grown at 640/spl deg/C","authors":"J. Novák, S. Hasen, V. Cambel, R. Kúdela, M. Kučera","doi":"10.1109/ASDAM.1998.730157","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730157","url":null,"abstract":"We have studied the resistivity anisotropy of ordered In/sub x/Ga/sub 1-x/P epitaxial layers grown at 640/spl deg/C. Increasing the lattice mismatch leads to an increase in the resistivity anisotropy, which is higher than two orders of magnitude. We suppose that this effect is caused by additional scattering at the boundaries of ordered domains.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"60 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122663360","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Microelectronics MIS gas-sensitive structures with enhanced stability 微电子MIS气敏结构与增强的稳定性
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730232
V. Litovchenko, T. Gorbanyuk, A. Efremov, A. Evtukh, I. P. Lisovski
{"title":"Microelectronics MIS gas-sensitive structures with enhanced stability","authors":"V. Litovchenko, T. Gorbanyuk, A. Efremov, A. Evtukh, I. P. Lisovski","doi":"10.1109/ASDAM.1998.730232","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730232","url":null,"abstract":"The stability of microelectronics Metal-lnsulator-Silicon (MIS) gas-sensitive structures with Pd and Pd/Cu composite metal layers have been studied and compared. The metal films were obtained by magnetron deposition in Ar plasma. Detailed investigations of surface morphology and chemical composition of the layers by SEM and AES depth profiling have been performed too. A shift of the flat band voltage (/spl Delta/V/sub js/), obtained from the measurements of capacitance voltage characteristics was used as a response of a MIS structure on the supplying of gas pulses. Such gases as hydrogen, humidity, and air (oxygen) were tested by the sensors. The kinetics of the responses was studied experimentally and compared with the results of a computer simulation. To investigate the stability of the MIS structures they were subjected to an accelerated artificial aging by annealing in air at 100-250/spl deg/C during 0.3-3 h. It was found that MIS sensors with Pd/Cu composite layer demonstrate higher sensitivity to hydrogen and higher stability under artificial aging than similar structure with Pd layer only.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123610603","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Band gap states in a-SiGe:H alloys determined from charge DLTS experiments 利用电荷DLTS实验测定a-SiGe:H合金带隙态
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730156
M. Zeman, V. Nádaždy, E. Pinčík, R. van Swaaij
{"title":"Band gap states in a-SiGe:H alloys determined from charge DLTS experiments","authors":"M. Zeman, V. Nádaždy, E. Pinčík, R. van Swaaij","doi":"10.1109/ASDAM.1998.730156","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730156","url":null,"abstract":"We used the charge deep level transient spectroscopy (DLTS) to determine the midgap density of states (DOS) distribution in undoped a-SiGe:H layers. By applying a bias voltage of -5 V and 0 V on the MIS structures and annealing them 10 minutes at equilibrium temperature of 490 K we moved the position of the Fermi level, E/sub F/, in the a-SiGe:H material, which has led to the different equilibrium distributions of the DOS. In case of applying -5 V, which moves E/sub F/ towards the valence band edge, the DOS distribution is dominated by a peak at 0.61 eV below the conduction band edge and in case of 0 V, when E/sub F/ is around midgap, a peak in the DOS distribution is formed at 0.80 eV. In both cases light soaking leads to an increase in the DOS and a formation of a subband at 0.90 eV.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129201242","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Pressure sensors on base of bipolar silicon strain sensitive transistors 基于双极硅应变敏感晶体管的压力传感器
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730211
G. G. Babichev, S. I. Kozlovskii, V. A. Romanov
{"title":"Pressure sensors on base of bipolar silicon strain sensitive transistors","authors":"G. G. Babichev, S. I. Kozlovskii, V. A. Romanov","doi":"10.1109/ASDAM.1998.730211","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730211","url":null,"abstract":"Theoretical and experimental studies were made of characteristics of bipolar strain sensitive transistors (tensotransistors). We describe the constructions and operating principles of tensotransistors, report theoretical calculation aimed to optimise the parameters of devices relative to higher sensitivity and energy consumption.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130866260","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Study of bimetallic effect in a GaAs cantilever beam of power sensor microsystem 功率传感器微系统中GaAs悬臂梁双金属效应的研究
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730228
T. Lalinsky, M. Drzik, S. Hascik, I. Mozolova, J. Kuzmík, Z. Hatzopoulos
{"title":"Study of bimetallic effect in a GaAs cantilever beam of power sensor microsystem","authors":"T. Lalinsky, M. Drzik, S. Hascik, I. Mozolova, J. Kuzmík, Z. Hatzopoulos","doi":"10.1109/ASDAM.1998.730228","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730228","url":null,"abstract":"A bimetallic effect in a 2-/spl mu/m-thick GaAs cantilever beam of power sensor microsystem (PSM) is studied using both the microscopic laser optical interferometry and laser optical reflectance measurement. The cantilever beam deflections induced by the different thermal expansion of the GaAs cantilever layer and the top device metallic leads are sensed at different power dissipations in the PSM heater. The key transfer characteristics of the PSM are found. The cantilever bimetallic effect is also considered to be used for the electrical power sensing.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134320072","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 5
Using sulfide treatment to improve performance of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures for spectral range, of 1.7-2.5 /spl mu/m 采用硫化物处理提高了GaSb/GaInAsSb/GaAlAsSb光电二极管异质结构的性能，光谱范围为1.7-2.5 /spl mu/m
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730187
I. Andreev, T. V. L’vova, M. Mikhailova, E. Kunitsyna, V.A. Soldv'ev, Y. Yakovlev
{"title":"Using sulfide treatment to improve performance of GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures for spectral range, of 1.7-2.5 /spl mu/m","authors":"I. Andreev, T. V. L’vova, M. Mikhailova, E. Kunitsyna, V.A. Soldv'ev, Y. Yakovlev","doi":"10.1109/ASDAM.1998.730187","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730187","url":null,"abstract":"We have investigated passivation of GaSb and its quaternary GalnAsSb, and GaAlAsSb alloys in Na/sub 2/S and (NH/sub 4/)/sub 2/S water solutions. It has been found that these semiconductors are etched in the used sulfide solutions. We have found the etching rates and kinetics of the etching processes. Basing on the obtained results we have determined optimal technological conditions for the passivation of GaSb-substrate before liquid phase epitaxy growing of the quaternary layers. The layers of the grown heterostructures have been shown a small lattice mismatch and have exhibited a good abruptness interface. We have also used the sulfide treatment to passivate the side surface GaSb/GaInAsSb/GaAlAsSb photodiode heterostructures. Reduction of reverse dark current by a factor of 2-10 times was achieved.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"94 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133322799","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
On the quantum interference transistor based on the electrostatic Aharonov-Bohm effect 基于静电Aharonov-Bohm效应的量子干涉晶体管
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730158
T. Figielski, T. Wosinski
{"title":"On the quantum interference transistor based on the electrostatic Aharonov-Bohm effect","authors":"T. Figielski, T. Wosinski","doi":"10.1109/ASDAM.1998.730158","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730158","url":null,"abstract":"Solid-state analogue of the electrostatic Aharonov-Bohn effect has been predicted for a long time. Basing on this effect, hypothetical designs of quantum interference transistor have been proposed but, surprisingly, they have never been realised in practice. We show that this failure is principal due to inherent instability of such devices against charge fluctuations.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"464 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123650608","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
CAD tools for microdevices and microsystems: today's demands, potentials and visions 微设备和微系统的CAD工具:当今的需求、潜力和愿景
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730222
G. Wachutka, P. Voigt, G. Schrag
{"title":"CAD tools for microdevices and microsystems: today's demands, potentials and visions","authors":"G. Wachutka, P. Voigt, G. Schrag","doi":"10.1109/ASDAM.1998.730222","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730222","url":null,"abstract":"In the development of microdevices and microsystems, computer simulations constitute a cost-effective and time-saving alternative to the traditional experimental approach by \"straightforward trial and error\". Application-oriented modeling does not only allow the visualization of fabrication processes and operational principles, but it also assists the designer in making decisions with a view to finding optimized microstructures under technological and economical constraints. The long-term vision is the automated optimization of microsystems according to customer-supplied specifications in a computer-based \"virtual factory\" prior to the real fabrication. To this end, strong efforts have to be made towards a predictive \"CAD tool box\" for top-down and closed-loop simulation of microsystems. We discuss the most important aspects to be focussed on and practicable methodologies for microdevice and system modeling such as the consistent treatment of coupled fields and coupled domains, physically-based modes for full system and mixed-mode simulation, and the reliable validation and calibration of models.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123779267","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Characterization of laterally nanopatterned W/Si multilayers 横向纳米化W/Si多层膜的表征
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730191
P. Hudek, I. Kostic, A. Konečníková, P. Mikulík, M. Jergel, E. Majková, S. Luby, R. Senderák, E. Pinčík, M. Brunel
{"title":"Characterization of laterally nanopatterned W/Si multilayers","authors":"P. Hudek, I. Kostic, A. Konečníková, P. Mikulík, M. Jergel, E. Majková, S. Luby, R. Senderák, E. Pinčík, M. Brunel","doi":"10.1109/ASDAM.1998.730191","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730191","url":null,"abstract":"We present a structural study of two amorphous periodic W/Si multilayer gratings obtained by etching the planar multilayer up to the multilayer substrate based on scanning-electron and atomic force microscopy observations and X-ray reflectivity measurements of coherent grating truncation rods. Two different exposure modes to prepare resist mask were examined to optimize the resulting grating structure. The real structural parameters of a more perfect grating were extracted from fitting the measured grating truncation rods. The simulations are based on the matrix modal eigenvalue approach of the dynamical theory of reflectivity by gratings which generalizes the Fresnel transmission and reflection coefficients for lateral diffraction. The interface imperfections are taken into account by the coherent amplitude approach which averages the propagation matrices of the wave field over random interface displacements.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"31 12 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116783442","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
New all-optical pump-and-probe technique for the investigation of the ambipolar in-plane diffusion in n-i-p-i doping superlattices 研究n-i-p-i掺杂超晶格中双极性平面内扩散的新型全光泵浦-探针技术
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730217
M. Vitzcthum, D. Streb, P. Kiesel, M. Kneissl, G. Dohler
{"title":"New all-optical pump-and-probe technique for the investigation of the ambipolar in-plane diffusion in n-i-p-i doping superlattices","authors":"M. Vitzcthum, D. Streb, P. Kiesel, M. Kneissl, G. Dohler","doi":"10.1109/ASDAM.1998.730217","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730217","url":null,"abstract":"We report on a new all-optical pump-and-probe technique for the investigation of the fast in-plane ambipolar diffusion process in n-i-p-i doping superlattices. This new technique allows not only the determination of the ambipolar diffusion coefficient but also the spatially resolved investigation of the stationary distribution of the optically induced excess carriers. In our n-i-p-i sample we have measured an ambipolar diffusion coefficient in the range of 10/sup 4/ cm/sup 2//s.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130088645","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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