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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)最新文献

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Surface-oriented and bulk GaAs and InP detectors for X-ray diagnostics of laser plasmas 用于激光等离子体x射线诊断的表面取向和块体GaAs和InP探测器
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730195
L. Ryć, F. Riesz, M. Pfeifer, Y. Korobkin
{"title":"Surface-oriented and bulk GaAs and InP detectors for X-ray diagnostics of laser plasmas","authors":"L. Ryć, F. Riesz, M. Pfeifer, Y. Korobkin","doi":"10.1109/ASDAM.1998.730195","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730195","url":null,"abstract":"Bulk and surface-oriented GaAs and InP photoconductive detectors were fabricated for laser-plasma diagnostic purposes. Current-voltage curves, pulse-height spectra measurements using light pulses and /spl alpha/-particles as well as pulses from different lasers are used to compare the defectors. Preliminary results using X-ray pulses from laser plasmas are presented. InP detectors were of higher performance.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128456407","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Structural and electrical properties of amorphous nitrogen doped SiC thin films annealed by pulsed electron beam 脉冲电子束退火非晶态氮掺杂SiC薄膜的结构和电学性能
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730193
J. Huran, J. Šafránková, J. Hotovy, A.P. Kohzev, N. Balalykin
{"title":"Structural and electrical properties of amorphous nitrogen doped SiC thin films annealed by pulsed electron beam","authors":"J. Huran, J. Šafránková, J. Hotovy, A.P. Kohzev, N. Balalykin","doi":"10.1109/ASDAM.1998.730193","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730193","url":null,"abstract":"The properties of nitrogen-doped amorphous SiC films irradiated by pulsed electron beams are presented. The I-V characteristics of diodes made of irradiated SiC films grown on silicon substrates were investigated. The results showed that the film conductivity increased by about two orders of magnitude as nitrogen fraction was increased from 10 at% to 14 at%. The film conductivity was enhanced by about one order of magnitude as a result of two-fold increase of pulsed electron beam irradiation.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"72 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114353882","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
W/Pt/Ge/Pd contact optimization for the measurement of GaAs quantum structures W/Pt/Ge/Pd接触优化测量GaAs量子结构
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730190
P. Machac, V. Myslík, M. Vrňata, J. Zlámal, P. Svoboda
{"title":"W/Pt/Ge/Pd contact optimization for the measurement of GaAs quantum structures","authors":"P. Machac, V. Myslík, M. Vrňata, J. Zlámal, P. Svoboda","doi":"10.1109/ASDAM.1998.730190","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730190","url":null,"abstract":"The contribution deals with the optimization of Ge/Pd type ohmic contacts prepared with the help of laser annealing. The best results were obtained in the case of Pt/W/Ge/Pd/n/sup +/-GaAs and Pt/W/Pt/Ge/Pd/n/sup +/-GaAs contact structures (r/sub c//spl sim/4/spl times/10/sup -16/ /spl Omega/ cm/sup 2/). The optimal inert atmosphere for the laser annealing of these contacts is argon, the best metal for the overlayer of the contact is platinum. The quantum standard of resistance based on quantum Hall phenomena with the contact structure of W/Pt/Ge/Pd type is shown as an example. Good contact pads of the prepared sample have the resistance of about 500 /spl Omega/.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133937664","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
GaInAs/GaAs strained QWs prepared by LP MOVPE on misoriented substrates 用LP MOVPE在错位基底上制备GaInAs/GaAs应变量子阱
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730188
E. Hulicius, A. Hospodková, J. Oswald, J. Pangrác, K. Melichar, T. Šimeček
{"title":"GaInAs/GaAs strained QWs prepared by LP MOVPE on misoriented substrates","authors":"E. Hulicius, A. Hospodková, J. Oswald, J. Pangrác, K. Melichar, T. Šimeček","doi":"10.1109/ASDAM.1998.730188","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730188","url":null,"abstract":"Luminescence properties of strained Ga/sub 1-x/ln/sub x/As/GaAs multiple quantum wells of different thickness and In content, prepared by metal organic vapour phase epitaxy were studied. The influence of composition and substrate orientation on the shape of luminescence spectra was investigated. The experimental results were fitted by model-solid theory and with adjusted Q parameter.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131914593","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
The influence of physical and chemical factors upon thermal and radiation stability of TiN-GaAs and TiB/sub 2/-GaAs contacts 物理化学因素对TiN-GaAs和TiB/sub - 2/-GaAs触点热稳定性和辐射稳定性的影响
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730214
V. V. Milenin, I. Ermolovich, R. Konakova, A. Belyaev, D.I. Voitsikhovsky, V. N. Ivanov, I. Hotovy
{"title":"The influence of physical and chemical factors upon thermal and radiation stability of TiN-GaAs and TiB/sub 2/-GaAs contacts","authors":"V. V. Milenin, I. Ermolovich, R. Konakova, A. Belyaev, D.I. Voitsikhovsky, V. N. Ivanov, I. Hotovy","doi":"10.1109/ASDAM.1998.730214","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730214","url":null,"abstract":"It has been well established that degradation of metal-semiconductor structures in the course of their operation under extreme conditions (high temperatures, strong electromagnetic field, radiation, etc.) is crucially affected by the mass transfer processes and by the nature of solid-phase interactions between the pairs of layers forming the contact. Under the influence of external factors, the structural and phase composition of the interface boundary change, and similarly changes the degree of local non-uniformity, impurity and defect composition of the subsurface region of the semiconductors, which results, eventually, into variations (degrading) of the electric and physical properties of the contacts. Nowadays, the search for structures with contacts metal-A/sup 3/B/sup 5/ which are stable and resistant against external effects tends to examine such metallic alloys and compounds which could markedly weaken the interdiffusion of metal-semiconductor layers. Among them, of particular interest are titanium borides and nitrides. The paper present a comparative study of TiB/sub 2/(TiN)-GaAs structures.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"158 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133097168","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Novel plasma enhanced bulk micromachining process for MEMS MEMS等离子体增强体微加工新工艺
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730224
B. Valland, F. Shi, P. Hudek, J.W. Rangelow
{"title":"Novel plasma enhanced bulk micromachining process for MEMS","authors":"B. Valland, F. Shi, P. Hudek, J.W. Rangelow","doi":"10.1109/ASDAM.1998.730224","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730224","url":null,"abstract":"In this paper we present a novel single mask bulk silicon micromachining process, for production of micromechanical devices, utilising deep trench cryo plasma etching. The originality of this process lies in secondary effects, such as reactive ion etching-Lag or shadowing, which are used to achieve different depths of etching of different structures on the same wafer. The base of the described technology uses only one-step single-layer lithography and dry etching processes. Therefore, this technology is very simple: (i) no mask alignment procedures are needed, (ii) suitable for batch processes for mass production, and (iii) all processes are compatible with processes used in the Integrated Circuits production.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"134 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123208183","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
Analysis of the temperature dependent I-V characteristics of the ICB deposited Ag/Si Schottky structures ICB沉积银/硅肖特基结构的温度相关I-V特性分析
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730184
D. Korosak, B. Cvikl
{"title":"Analysis of the temperature dependent I-V characteristics of the ICB deposited Ag/Si Schottky structures","authors":"D. Korosak, B. Cvikl","doi":"10.1109/ASDAM.1998.730184","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730184","url":null,"abstract":"The current-voltage characteristics of Ionized Cluster Beam (ICB) deposited Ag/n-Si Schottky structures for nonzero acceleration voltage U/sub g/=300 V, 1 kV measured in the temperature interval T/spl isin/[300 K, 150 K] are analysed in order to identify possible different charge transport mechanisms on the samples. In the high temperature interval the charge transport is well enough described within the thermionic emission theory framework (TE), whereas in the low temperature interval (T<200 K) the suitable description of the transport is obtained assuming conduction through deep impurity levels and hopping process between continuously destructed localized electron states in the silicon band gap. It is argued that the addition transport mechanisms are induced by the disordered interfacial control layer (DICL) form by the energetic Ag ion incorporated into silicon crystal lattice situated between the metal and the ordered part of the semiconductor.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114536511","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
High-speed heterostructure photodetectors characterisation 高速异质结构光电探测器表征
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730176
M. Tombska, F. Uherek, J. Jakabovic
{"title":"High-speed heterostructure photodetectors characterisation","authors":"M. Tombska, F. Uherek, J. Jakabovic","doi":"10.1109/ASDAM.1998.730176","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730176","url":null,"abstract":"A measurement set-up for high-speed photodetector properties investigation in frequency domain up to 20 GHz is described. Using this set-up, heterostructure photodetectors were characterised employing microwave reflection coefficient and/or optoelectronic transmission coefficient measurements. The equivalent circuit of the photodetector device was identified from microwave reflection coefficient measurements. Transmission measurements and simulations of photodetector were performed and compared in time and/or frequency domain.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125310725","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Electroluminescence investigation of GaAs/AlAs monolayer multiquantum well structures GaAs/AlAs单层多量子阱结构的电致发光研究
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730216
J. Kovác, D. Pudiš, A. Šatka, L. Janos, R. Redhammer, V. Gotschalch, R. Schwabe, B. Rheinlander, R. Pickenhain
{"title":"Electroluminescence investigation of GaAs/AlAs monolayer multiquantum well structures","authors":"J. Kovác, D. Pudiš, A. Šatka, L. Janos, R. Redhammer, V. Gotschalch, R. Schwabe, B. Rheinlander, R. Pickenhain","doi":"10.1109/ASDAM.1998.730216","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730216","url":null,"abstract":"We present experimental studies of electroluminescence in GaAs/AlAs type II monolayer multiquantum well (MQW) heterostructures embedded in InAlP undoped confinement layer grown by low pressure MOVPE. The p-n junction in structure was created by local diffusion of Zn from conductive ZnO film. The phonon assisted optical processes are observed at room temperature where indirect optical transitions at 545 and 720 nm are present in weak electroluminescence spectra. Intense optical transition at 572 nm prevail at the low temperature (77 K) which corresponds to type I optical transition. Type II optical transition at 688 nm in GaAs/AlAs MQW structure shows low intensity. The electroluminescence of type I optical transitions in type II monolayer GaAs/AlAs MQW structures is reported for the first time.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"67 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116128400","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A comparision of small signal homojunction and heterojunction model 小信号同质结与异质结模型的比较
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730197
M. Hatak
{"title":"A comparision of small signal homojunction and heterojunction model","authors":"M. Hatak","doi":"10.1109/ASDAM.1998.730197","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730197","url":null,"abstract":"The N-AlGaAs/p-GaAs heterojunction with dc bias and small ac signal is investigated. It is shown that its complex small signal admittance consists of two contributions; the first one is the minority electron diffusion in quasineutral p-region region and the second one is the process of thermionic emission at the abrupt heterointerface.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114932480","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
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