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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)最新文献

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On limitingly high temperature measurable by diode sensor 二极管传感器测量极限高温的研究
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730208
Yu. M. Shwarts, N. Kulish, V.L. Borblik, E. F. Venger
{"title":"On limitingly high temperature measurable by diode sensor","authors":"Yu. M. Shwarts, N. Kulish, V.L. Borblik, E. F. Venger","doi":"10.1109/ASDAM.1998.730208","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730208","url":null,"abstract":"The criterion limiting from above a range of temperatures measurable by means of diode sensor has been found. It is an equality of voltage drop U across p-n junction to thermal voltage kT/q. Use of this criterion has allowed to express a value of maximal measurable temperature T* through physical and design parameters of diode and an excitation current. It is shown that variation of diode parameters giving rise to extension of the range of temperatures measurable by means of diode sensor is accompanied by reducing of its sensitivity. As an example validity of determined theoretically relation between T* and silicon temperature sensor parameters has been experimentally verified.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"25 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128659313","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Artificial photoreceptor-lens system with bacteriorhodopsin 细菌视紫红质的人工光感受器-透镜系统
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730210
A. Merticaru
{"title":"Artificial photoreceptor-lens system with bacteriorhodopsin","authors":"A. Merticaru","doi":"10.1109/ASDAM.1998.730210","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730210","url":null,"abstract":"An artificial photoreceptor based on bacteriorhodopsin (bR) photocell is presented in the paper. We study the performances of the lens-system with bR as a photochromic material. The study focuses on image-detecting like that processing in the human eye. The imaging capability of the photoreceptor is improved by the original lens-system design.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"49 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"122896659","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterisation of 2DEG Hall probes in high magnetic field at 4.2 K 2DEG霍尔探针在4.2 K强磁场中的特性研究
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730159
V. Cambel, R. Kúdela, D. Gregušová, S. Haseohrl, P. Eliáš, J. Novák
{"title":"Characterisation of 2DEG Hall probes in high magnetic field at 4.2 K","authors":"V. Cambel, R. Kúdela, D. Gregušová, S. Haseohrl, P. Eliáš, J. Novák","doi":"10.1109/ASDAM.1998.730159","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730159","url":null,"abstract":"We paper summarises our results our the characterisation of 2DEG Hall probes, prepared by MOCVD technology, in magnetic fields up to 12 T at temperatures up to 1.2 K.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127634453","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Low cost technology for high frequency bipolar integrated circuits 高频双极集成电路的低成本技术
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730164
M. Badila, C. Codreanu, G. Brezeanu
{"title":"Low cost technology for high frequency bipolar integrated circuits","authors":"M. Badila, C. Codreanu, G. Brezeanu","doi":"10.1109/ASDAM.1998.730164","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730164","url":null,"abstract":"A new low cost technology for high frequency bipolar circuits is proposed. It upgrades a classical \"LISA\" (Local Implantation Self Aligned) technology using a 14 masks process. The \"basic\" npn elementary transistor in the new technology has a 2.2 GHz cutoff frequency, and the parasitic elements in circuits are reduced. The performances of the new technology are verified by means of some demonstrator circuits: a \"Gilbert\" cell with a bandwidth of 700 MHz, and some broadband, high frequency amplifiers.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"62 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133117819","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Modeling and simulation of surface generation-recombination in Schottky diodes 肖特基二极管表面生成-复合的建模与仿真
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730183
V. Drobny, J. Racko, D. Donoval
{"title":"Modeling and simulation of surface generation-recombination in Schottky diodes","authors":"V. Drobny, J. Racko, D. Donoval","doi":"10.1109/ASDAM.1998.730183","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730183","url":null,"abstract":"The properties of the metal-semiconductor interface, which plays a dominant role in the charge transport through Schottky structures, are still not understood satisfactorily. The extraction of parameters from the measured I-V characteristics based on the classical thermionic emission-diffusion theory usually fails, especially at lower temperatures. We present a new more complex physical model which includes also the effects of surface generation-recombination and tunneling of free carriers via surface deep traps. Then the correlation of simulation experimental I-V characteristic is obtained in a much wider range of applied voltages and temperatures.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"108 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133212116","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Optical properties of semi-insulating InP:Fe irradiated by fast neutrons 快中子辐照半绝缘InP:Fe的光学性质
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730207
J. Mudroň, J. Mullerová, F. Dubecký, J. Huran
{"title":"Optical properties of semi-insulating InP:Fe irradiated by fast neutrons","authors":"J. Mudroň, J. Mullerová, F. Dubecký, J. Huran","doi":"10.1109/ASDAM.1998.730207","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730207","url":null,"abstract":"Semi-insulating Fe-doped InP samples have been investigated by optical reflectance measurements before and after fast neutron irradiations with fluences ranged from 7.2/spl times/10/sup 12/ to 3.8/spl times/10/sup 15/ neutron/cm/sup 2/. From the spectral dependence of the reflectance in the photon energy range between 1.5-6.0 eV the determination of the optical constants (real refractive index, extinction coefficient, real and imaginary parts of the dielectric function, respectively, and absorption coefficient) has been performed using the Kramers-Kronig dispersion analysis technique.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133884920","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
New method of surface barrier structures characterization using plasmon-polariton photoeffect 利用等离子体-极化子光效应表征表面势垒结构的新方法
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730201
N. Dmitruk, O.I. Mayeva, S. Mamykin, O. Yastrubchak
{"title":"New method of surface barrier structures characterization using plasmon-polariton photoeffect","authors":"N. Dmitruk, O.I. Mayeva, S. Mamykin, O. Yastrubchak","doi":"10.1109/ASDAM.1998.730201","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730201","url":null,"abstract":"The new method of characterization of Schottky barrier surface polariton (SP waves based photodetectors is presented and its very promising ability of optimization of their parameters (diffusion length, Schottky barrier height electron and hole emission rates and surface recombination velocity, etc.) is shown.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"9 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"129536606","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Persistent behaviour of 2DEG in single /spl delta/-layers 2DEG在单个/spl delta/-层中的持续行为
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730203
J. J. Mareš, J. Kristofik, P. Hubík, X. Feng
{"title":"Persistent behaviour of 2DEG in single /spl delta/-layers","authors":"J. J. Mareš, J. Kristofik, P. Hubík, X. Feng","doi":"10.1109/ASDAM.1998.730203","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730203","url":null,"abstract":"The persistent light-induced changes in InP sulphur doped single /spl delta/-layers were investigated experimentally by the magnetotransport methods. It was shown that in these highly disordered two-dimensional structures the observed behaviour is controlled by the sulphur-related DX-centres while the Fermi level of the sample as a whole is stabilised by the substrate background.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127054621","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Thin film sensoric interfaces for biosensors 用于生物传感器的薄膜传感接口
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730235
R. Ivanic
{"title":"Thin film sensoric interfaces for biosensors","authors":"R. Ivanic","doi":"10.1109/ASDAM.1998.730235","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730235","url":null,"abstract":"Thin films in microelectrochemical biosensors can create sensoric interfaces, which are consisted of two main parts: thin film planar microelectrodes and active sensitive biological layers found on them. The quality of the sensoric interface is depending on quality of thin film electrode surface. Thin film electrodes have been cleaned by new pulsing cleaning. The model of the bilayer lipid membrane (BLM) consists of parallel RC circuit. The BLM formed on thin film electrode microsystems are described by a new equivalent circuit based on the standard BLM circuit. The mechanical properties of the BLM are included in variable membrane capacitance. This new models has been elaborated using a newly BLM simulator.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133364295","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Microwave properties of the MSM photodetectors with 2-DEG 2度MSM光电探测器的微波特性
ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI: 10.1109/ASDAM.1998.730221
M. Tomáška, M. Marso, A. Fox, P. Kordos
{"title":"Microwave properties of the MSM photodetectors with 2-DEG","authors":"M. Tomáška, M. Marso, A. Fox, P. Kordos","doi":"10.1109/ASDAM.1998.730221","DOIUrl":"https://doi.org/10.1109/ASDAM.1998.730221","url":null,"abstract":"MSM photodetectors are investigated by measurement and modelling in microwave region. Cut-off frequencies are compared for different structures and layouts. Significant improvement of 2-DEG MSM's frequency response on low operating voltages was found.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"39 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"123455902","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 3
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