快中子辐照半绝缘InP:Fe的光学性质

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730207

J. Mudroň, J. Mullerová, F. Dubecký, J. Huran

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引用次数: 2

摘要

利用快中子辐照前后的光学反射率测量研究了半绝缘掺铁InP样品，其影响范围为7.2/spl次/10/sup 12/至3.8/spl次/10/sup 15/中子/cm/sup 2/。从1.5 ~ 6.0 eV光子能量范围内反射率的光谱依赖性出发，利用Kramers-Kronig色散分析技术确定了光学常数(实折射率、消光系数、介电函数的实部和虚部以及吸收系数)。

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Optical properties of semi-insulating InP:Fe irradiated by fast neutrons

Semi-insulating Fe-doped InP samples have been investigated by optical reflectance measurements before and after fast neutron irradiations with fluences ranged from 7.2/spl times/10/sup 12/ to 3.8/spl times/10/sup 15/ neutron/cm/sup 2/. From the spectral dependence of the reflectance in the photon energy range between 1.5-6.0 eV the determination of the optical constants (real refractive index, extinction coefficient, real and imaginary parts of the dielectric function, respectively, and absorption coefficient) has been performed using the Kramers-Kronig dispersion analysis technique.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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