Low cost technology for high frequency bipolar integrated circuits

Abstract

A new low cost technology for high frequency bipolar circuits is proposed. It upgrades a classical "LISA" (Local Implantation Self Aligned) technology using a 14 masks process. The "basic" npn elementary transistor in the new technology has a 2.2 GHz cutoff frequency, and the parasitic elements in circuits are reduced. The performances of the new technology are verified by means of some demonstrator circuits: a "Gilbert" cell with a bandwidth of 700 MHz, and some broadband, high frequency amplifiers.