2DEG在单个/spl delta/-层中的持续行为

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730203

J. J. Mareš, J. Kristofik, P. Hubík, X. Feng

{"title":"2DEG在单个/spl delta/-层中的持续行为","authors":"J. J. Mareš, J. Kristofik, P. Hubík, X. Feng","doi":"10.1109/ASDAM.1998.730203","DOIUrl":null,"url":null,"abstract":"The persistent light-induced changes in InP sulphur doped single /spl delta/-layers were investigated experimentally by the magnetotransport methods. It was shown that in these highly disordered two-dimensional structures the observed behaviour is controlled by the sulphur-related DX-centres while the Fermi level of the sample as a whole is stabilised by the substrate background.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Persistent behaviour of 2DEG in single /spl delta/-layers\",\"authors\":\"J. J. Mareš, J. Kristofik, P. Hubík, X. Feng\",\"doi\":\"10.1109/ASDAM.1998.730203\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The persistent light-induced changes in InP sulphur doped single /spl delta/-layers were investigated experimentally by the magnetotransport methods. It was shown that in these highly disordered two-dimensional structures the observed behaviour is controlled by the sulphur-related DX-centres while the Fermi level of the sample as a whole is stabilised by the substrate background.\",\"PeriodicalId\":378441,\"journal\":{\"name\":\"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.1998.730203\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.1998.730203","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 0

摘要

用磁输运方法研究了掺杂InP硫的单/spl δ /-层的持续光致变化。结果表明，在这些高度无序的二维结构中，观察到的行为是由硫相关的dx中心控制的，而样品的费米能级作为一个整体是由底物背景稳定的。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

Persistent behaviour of 2DEG in single /spl delta/-layers

The persistent light-induced changes in InP sulphur doped single /spl delta/-layers were investigated experimentally by the magnetotransport methods. It was shown that in these highly disordered two-dimensional structures the observed behaviour is controlled by the sulphur-related DX-centres while the Fermi level of the sample as a whole is stabilised by the substrate background.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

自引率

0.00%

发文量