2DEG霍尔探针在4.2 K强磁场中的特性研究

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730159

V. Cambel, R. Kúdela, D. Gregušová, S. Haseohrl, P. Eliáš, J. Novák

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摘要

本文总结了用MOCVD技术制备的2DEG霍尔探针在12 T磁场和1.2 K温度下的表征结果。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Characterisation of 2DEG Hall probes in high magnetic field at 4.2 K

We paper summarises our results our the characterisation of 2DEG Hall probes, prepared by MOCVD technology, in magnetic fields up to 12 T at temperatures up to 1.2 K.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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