二极管传感器测量极限高温的研究

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730208

Yu. M. Shwarts, N. Kulish, V.L. Borblik, E. F. Venger

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引用次数: 2

摘要

找到了用二极管传感器测量温度范围以上的判据。它等于p-n结的电压降U与热电压kT/q。使用这个判据，可以通过二极管的物理和设计参数和激励电流来表示最大可测量温度T*的值。结果表明，随着二极管参数的变化，二极管传感器可测温度范围的扩大，其灵敏度随之降低。作为算例，实验验证了T*与硅温度传感器参数之间理论关系的有效性。

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On limitingly high temperature measurable by diode sensor

The criterion limiting from above a range of temperatures measurable by means of diode sensor has been found. It is an equality of voltage drop U across p-n junction to thermal voltage kT/q. Use of this criterion has allowed to express a value of maximal measurable temperature T* through physical and design parameters of diode and an excitation current. It is shown that variation of diode parameters giving rise to extension of the range of temperatures measurable by means of diode sensor is accompanied by reducing of its sensitivity. As an example validity of determined theoretically relation between T* and silicon temperature sensor parameters has been experimentally verified.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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