GaInAs/GaAs strained QWs prepared by LP MOVPE on misoriented substrates

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730188

E. Hulicius, A. Hospodková, J. Oswald, J. Pangrác, K. Melichar, T. Šimeček

引用次数: 1

Abstract

Luminescence properties of strained Ga/sub 1-x/ln/sub x/As/GaAs multiple quantum wells of different thickness and In content, prepared by metal organic vapour phase epitaxy were studied. The influence of composition and substrate orientation on the shape of luminescence spectra was investigated. The experimental results were fitted by model-solid theory and with adjusted Q parameter.

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用LP MOVPE在错位基底上制备GaInAs/GaAs应变量子阱

研究了金属有机气相外延制备不同厚度和In含量的应变Ga/sub - 1-x/ln/sub -x/ As/GaAs多量子阱的发光特性。研究了材料组成和衬底取向对发光光谱形状的影响。采用模型-固体理论对实验结果进行了拟合，并调整了Q参数。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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