W/Pt/Ge/Pd接触优化测量GaAs量子结构

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730190

P. Machac, V. Myslík, M. Vrňata, J. Zlámal, P. Svoboda

{"title":"W/Pt/Ge/Pd接触优化测量GaAs量子结构","authors":"P. Machac, V. Myslík, M. Vrňata, J. Zlámal, P. Svoboda","doi":"10.1109/ASDAM.1998.730190","DOIUrl":null,"url":null,"abstract":"The contribution deals with the optimization of Ge/Pd type ohmic contacts prepared with the help of laser annealing. The best results were obtained in the case of Pt/W/Ge/Pd/n/sup +/-GaAs and Pt/W/Pt/Ge/Pd/n/sup +/-GaAs contact structures (r/sub c//spl sim/4/spl times/10/sup -16/ /spl Omega/ cm/sup 2/). The optimal inert atmosphere for the laser annealing of these contacts is argon, the best metal for the overlayer of the contact is platinum. The quantum standard of resistance based on quantum Hall phenomena with the contact structure of W/Pt/Ge/Pd type is shown as an example. Good contact pads of the prepared sample have the resistance of about 500 /spl Omega/.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"75 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"W/Pt/Ge/Pd contact optimization for the measurement of GaAs quantum structures\",\"authors\":\"P. Machac, V. Myslík, M. Vrňata, J. Zlámal, P. Svoboda\",\"doi\":\"10.1109/ASDAM.1998.730190\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The contribution deals with the optimization of Ge/Pd type ohmic contacts prepared with the help of laser annealing. The best results were obtained in the case of Pt/W/Ge/Pd/n/sup +/-GaAs and Pt/W/Pt/Ge/Pd/n/sup +/-GaAs contact structures (r/sub c//spl sim/4/spl times/10/sup -16/ /spl Omega/ cm/sup 2/). The optimal inert atmosphere for the laser annealing of these contacts is argon, the best metal for the overlayer of the contact is platinum. The quantum standard of resistance based on quantum Hall phenomena with the contact structure of W/Pt/Ge/Pd type is shown as an example. Good contact pads of the prepared sample have the resistance of about 500 /spl Omega/.\",\"PeriodicalId\":378441,\"journal\":{\"name\":\"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)\",\"volume\":\"75 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.1998.730190\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.1998.730190","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

研究了激光退火制备的Ge/Pd型欧姆触点的优化问题。在Pt/W/Ge/Pd/n/sup +/-GaAs和Pt/W/Pt/Ge/Pd/n/sup +/-GaAs的接触结构(r/sub / c//spl sim/4/spl times/10/sup -16/ /spl Omega/ cm/sup 2/)下获得了最好的结果。这些触点激光退火的最佳惰性气氛是氩气，触点覆盖层的最佳金属是铂。以W/Pt/Ge/Pd型接触结构为例，给出了基于量子霍尔现象的电阻量子标准。所制备样品的良好接触垫的电阻约为500 /spl ω /。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文本刊更多论文

W/Pt/Ge/Pd contact optimization for the measurement of GaAs quantum structures

The contribution deals with the optimization of Ge/Pd type ohmic contacts prepared with the help of laser annealing. The best results were obtained in the case of Pt/W/Ge/Pd/n/sup +/-GaAs and Pt/W/Pt/Ge/Pd/n/sup +/-GaAs contact structures (r/sub c//spl sim/4/spl times/10/sup -16/ /spl Omega/ cm/sup 2/). The optimal inert atmosphere for the laser annealing of these contacts is argon, the best metal for the overlayer of the contact is platinum. The quantum standard of resistance based on quantum Hall phenomena with the contact structure of W/Pt/Ge/Pd type is shown as an example. Good contact pads of the prepared sample have the resistance of about 500 /spl Omega/.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

自引率

0.00%

发文量