A comparision of small signal homojunction and heterojunction model

Abstract

The N-AlGaAs/p-GaAs heterojunction with dc bias and small ac signal is investigated. It is shown that its complex small signal admittance consists of two contributions; the first one is the minority electron diffusion in quasineutral p-region region and the second one is the process of thermionic emission at the abrupt heterointerface.