高速异质结构光电探测器表征

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730176

M. Tombska, F. Uherek, J. Jakabovic

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引用次数: 2

摘要

介绍了一种用于20 GHz频域高速光电探测器性能研究的测量装置。利用该装置，异质结构光电探测器采用微波反射系数和/或光电透射系数测量来表征。通过测量微波反射系数，确定了光电探测器器件的等效电路。对光电探测器进行了时域和频域的传输测量和仿真。

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High-speed heterostructure photodetectors characterisation

A measurement set-up for high-speed photodetector properties investigation in frequency domain up to 20 GHz is described. Using this set-up, heterostructure photodetectors were characterised employing microwave reflection coefficient and/or optoelectronic transmission coefficient measurements. The equivalent circuit of the photodetector device was identified from microwave reflection coefficient measurements. Transmission measurements and simulations of photodetector were performed and compared in time and/or frequency domain.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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