Analysis of the temperature dependent I-V characteristics of the ICB deposited Ag/Si Schottky structures

The current-voltage characteristics of Ionized Cluster Beam (ICB) deposited Ag/n-Si Schottky structures for nonzero acceleration voltage U/sub g/=300 V, 1 kV measured in the temperature interval T/spl isin/[300 K, 150 K] are analysed in order to identify possible different charge transport mechanisms on the samples. In the high temperature interval the charge transport is well enough described within the thermionic emission theory framework (TE), whereas in the low temperature interval (T<200 K) the suitable description of the transport is obtained assuming conduction through deep impurity levels and hopping process between continuously destructed localized electron states in the silicon band gap. It is argued that the addition transport mechanisms are induced by the disordered interfacial control layer (DICL) form by the energetic Ag ion incorporated into silicon crystal lattice situated between the metal and the ordered part of the semiconductor.