基于双极硅应变敏感晶体管的压力传感器

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730211

G. G. Babichev, S. I. Kozlovskii, V. A. Romanov

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摘要

对双极应变敏感晶体管(张激晶体管)的特性进行了理论和实验研究。我们描述了张性晶体管的结构和工作原理，报告了旨在优化器件参数的理论计算，相对于更高的灵敏度和能耗。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Pressure sensors on base of bipolar silicon strain sensitive transistors

Theoretical and experimental studies were made of characteristics of bipolar strain sensitive transistors (tensotransistors). We describe the constructions and operating principles of tensotransistors, report theoretical calculation aimed to optimise the parameters of devices relative to higher sensitivity and energy consumption.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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