基于静电Aharonov-Bohm效应的量子干涉晶体管

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730158

T. Figielski, T. Wosinski

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引用次数: 2

摘要

固体模拟的静电Aharonov-Bohn效应已经预测了很长时间。基于这种效应，已经提出了量子干涉晶体管的假设设计，但令人惊讶的是，它们从未在实践中实现。我们表明，这种失败主要是由于这种器件对电荷波动的固有不稳定性。

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On the quantum interference transistor based on the electrostatic Aharonov-Bohm effect

Solid-state analogue of the electrostatic Aharonov-Bohn effect has been predicted for a long time. Basing on this effect, hypothetical designs of quantum interference transistor have been proposed but, surprisingly, they have never been realised in practice. We show that this failure is principal due to inherent instability of such devices against charge fluctuations.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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