在640/spl度/C下生长的有序in /sub x/Ga/sub 1-x/P的电阻率各向异性和表面形貌

ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172) Pub Date : 1998-10-05 DOI:10.1109/ASDAM.1998.730157

J. Novák, S. Hasen, V. Cambel, R. Kúdela, M. Kučera

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摘要

我们研究了在640/spl度/C下生长的有序In/sub x/Ga/sub 1-x/P外延层的电阻率各向异性。晶格失配的增加导致电阻率各向异性的增加，其增加幅度大于两个数量级。我们认为这种效应是由有序畴边界处的额外散射引起的。

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Resistivity anisotropy and surface morphology in ordered In/sub x/Ga/sub 1-x/P grown at 640/spl deg/C

We have studied the resistivity anisotropy of ordered In/sub x/Ga/sub 1-x/P epitaxial layers grown at 640/spl deg/C. Increasing the lattice mismatch leads to an increase in the resistivity anisotropy, which is higher than two orders of magnitude. We suppose that this effect is caused by additional scattering at the boundaries of ordered domains.

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ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)

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