{"title":"硅基硬玻璃层技术及其在微波半导体器件中的应用","authors":"M. Grabowski, W. Jabłoński","doi":"10.1109/ASDAM.1998.730177","DOIUrl":null,"url":null,"abstract":"Paper describes the method of preparing of hard glass layers on silicon substrates. The thickness of the wafers run from few to one hundred micrometers. Hard glass layers are applied for microwave semiconductor components as passivation layers or thick dielectric supports for beam-leads contacts to reduce parasitic capacitance.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"The technology of hard glass layers on silicon substrates and their application in microwave semiconductor devices\",\"authors\":\"M. Grabowski, W. Jabłoński\",\"doi\":\"10.1109/ASDAM.1998.730177\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Paper describes the method of preparing of hard glass layers on silicon substrates. The thickness of the wafers run from few to one hundred micrometers. Hard glass layers are applied for microwave semiconductor components as passivation layers or thick dielectric supports for beam-leads contacts to reduce parasitic capacitance.\",\"PeriodicalId\":378441,\"journal\":{\"name\":\"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)\",\"volume\":\"70 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1998-10-05\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ASDAM.1998.730177\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.1998.730177","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
The technology of hard glass layers on silicon substrates and their application in microwave semiconductor devices
Paper describes the method of preparing of hard glass layers on silicon substrates. The thickness of the wafers run from few to one hundred micrometers. Hard glass layers are applied for microwave semiconductor components as passivation layers or thick dielectric supports for beam-leads contacts to reduce parasitic capacitance.