{"title":"Optical modelling of single junction a-Si:H solar cells with textured interfaces","authors":"D. Búc, M. Zeman, J. Metselaar","doi":"10.1109/ASDAM.1998.730199","DOIUrl":null,"url":null,"abstract":"Optical simulations were carried out in order to understand the effect of scattering at textured interfaces on the optical properties of a single junction a-Si:H solar cell. We used an optical numerical simulator for rite calculation of the absorption profiles in the solar cell. A sensitivity study of the influence of the model scattering parameters on the quantum efficiency of the a-Si:H solar cells was carried out and the most sensitive parameters were determined. From the calculated absorption profiles we have determined the losses in the non-active layers and the gain in the intrinsic layer of the solar cell.","PeriodicalId":378441,"journal":{"name":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","volume":"88 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1998-10-05","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM '98. Conference Proceedings. Second International Conference on Advanced Semiconductor Devices and Microsystems (Cat. No.98EX172)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.1998.730199","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Optical simulations were carried out in order to understand the effect of scattering at textured interfaces on the optical properties of a single junction a-Si:H solar cell. We used an optical numerical simulator for rite calculation of the absorption profiles in the solar cell. A sensitivity study of the influence of the model scattering parameters on the quantum efficiency of the a-Si:H solar cells was carried out and the most sensitive parameters were determined. From the calculated absorption profiles we have determined the losses in the non-active layers and the gain in the intrinsic layer of the solar cell.