Current status and future of advanced CMOS technologies-digital and analog aspect

H. Iwai
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引用次数: 2

Abstract

CMOS LSIs have achieved a great success for these 15 years as the mainstream of the semiconductor for integrated circuits. The progress has been driven by the downsizing of the components in an LSI such as MOSFETs. However, even before the downsizing of MOSFETs reaches its fundamental limit, the downsizing is expected to encounter severe technological and economic problems at the beginning of next century when the minimum feature size of LSIs is going to shift to 0.1 and sub-0.1 /spl mu/m. In this paper, after the brief introduction of the current status of CMOS technology, the anticipated difficulties and some concepts for 0.1 and sub-0.1 /spl mu/m LSIs are explained based on the research of the downsizing MOSFET into such dimension. Also, some new aspects of CMOS application such as RF CMOS technology for mobile telecommunication is briefly described. Finally, further concept for deep-sub-0.1 /spl mu/m LSIs is explained.
先进CMOS技术的现状和未来——数字和模拟两方面
作为集成电路半导体的主流,CMOS lsi在过去15年中取得了巨大的成功。这一进展是由大规模集成电路(如mosfet)中元件的小型化推动的。然而,即使在mosfet的小型化达到其基本极限之前,小型化预计将在下个世纪初遇到严重的技术和经济问题,届时lsi的最小特征尺寸将转向0.1和低于0.1 /spl mu/m。本文在简要介绍了CMOS技术的现状后,通过对MOSFET小型化的研究,阐述了0.1和低于0.1 /spl mu/m的lsi可能面临的困难和一些概念。并简要介绍了CMOS在移动通信中的应用,如射频CMOS技术等。最后,进一步解释了深-0.1 /spl mu/m lsi的概念。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
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