International Semiconductor Device Research Symposium, 2003最新文献_第3页

Enhanced functionality in GaN and SiC devices by using novel processing 通过使用新颖的工艺，增强了GaN和SiC器件的功能

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272107

S. Pearton, C. Abernathy, B. Gila, F. Ren, J. Zavada, S. Chu

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引用次数: 6

Effect of insulated shallow extension for the improved short-channel effect of sub-100 nm MOSFET 绝缘浅延伸对改善亚100nm MOSFET短沟道效应的影响

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272041

C. Shih, Yi-Min Chen, C. Lien

引用次数: 1

Luminescence of Pr and Tm ions implanted into AlN thin films Pr和Tm离子注入AlN薄膜的发光特性

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272000

W. Jadwisienczak, H. Lozykowski, A. Bensaoula, O. Monteiro

引用次数: 0

Maskless fabrication of JFETs via focused ion beams 利用聚焦离子束无掩膜制备jfet

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272165

A. J. de Marco, J. Melngailis

引用次数: 9

Annealing effects on the interfacial properties of GaN MOS prepared by photo-enhanced wet oxidation 退火对光增强湿氧化制备GaN - MOS界面性能的影响

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272156

H.-M. Wu, J. Lin, L. Peng, C. Lee, J. Chyi, E. Chen

引用次数: 3

Dual-gate (FinFET) and tri-Gate MOSFETs: simulation and design 双栅极(FinFET)和三栅极mosfet:仿真和设计

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272037

A. Breed, K. Roenker

引用次数: 14

A novel high current gain lateral PNP transistor on SOI for complementary bipolar technology 一种基于互补双极技术的新型高电流增益横向PNP晶体管

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272092

M.J. Kumar, V. Parihar

引用次数: 3

High power GaN/AlGaN/GaN HEMTs operating at 2 to 25 GHz grown by plasma-assisted molecular beam epitaxy 利用等离子体辅助分子束外延生长出工作频率为2 ~ 25 GHz的高功率GaN/AlGaN/GaN hemt

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272170

M. Manfra

引用次数: 0

DG-SOI ratioed logic with symmetric DG load - a novel approach for sub 50 nm LV/LP circuit design 具有对称DG负载的DG- soi比率逻辑-一种用于50nm以下低压/低压电路设计的新方法

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272149

S. Mitra, A. Salman, D. Ioannou, C. Tretz, D. Ioannou

引用次数: 0

Compact models for silicon carbide power devices 碳化硅功率器件的紧凑模型

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272197

T. McNutt, A. Hefner, A. Mantooth, D. Berning, R. Singh

引用次数: 24