T. McNutt, A. Hefner, A. Mantooth, D. Berning, R. Singh
{"title":"碳化硅功率器件的紧凑模型","authors":"T. McNutt, A. Hefner, A. Mantooth, D. Berning, R. Singh","doi":"10.1109/ISDRS.2003.1272197","DOIUrl":null,"url":null,"abstract":"In order for circuit designers to fully utilize the advantages of the new SiC power device technologies, compact models are needed in circuit and system simulation tools. Models of silicon carbide power device characteristics were presented in this paper. Physics based models of VDMOSFET, output characteristics and switching vs gate resistance characteristics of SiC DiMOSFET were presented in this paper.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"65 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"24","resultStr":"{\"title\":\"Compact models for silicon carbide power devices\",\"authors\":\"T. McNutt, A. Hefner, A. Mantooth, D. Berning, R. Singh\",\"doi\":\"10.1109/ISDRS.2003.1272197\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In order for circuit designers to fully utilize the advantages of the new SiC power device technologies, compact models are needed in circuit and system simulation tools. Models of silicon carbide power device characteristics were presented in this paper. Physics based models of VDMOSFET, output characteristics and switching vs gate resistance characteristics of SiC DiMOSFET were presented in this paper.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"65 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"24\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272197\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272197","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In order for circuit designers to fully utilize the advantages of the new SiC power device technologies, compact models are needed in circuit and system simulation tools. Models of silicon carbide power device characteristics were presented in this paper. Physics based models of VDMOSFET, output characteristics and switching vs gate resistance characteristics of SiC DiMOSFET were presented in this paper.
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