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International Semiconductor Device Research Symposium, 2003最新文献

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Dependence of Schottky barrier height on electronic and chemical properties of Ni/AlGaN contacts 肖特基势垒高度对Ni/AlGaN触点电子和化学性质的影响
International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272155
S. T. Bradley, L. Brillson, J. Hwang, W. Schaff
{"title":"Dependence of Schottky barrier height on electronic and chemical properties of Ni/AlGaN contacts","authors":"S. T. Bradley, L. Brillson, J. Hwang, W. Schaff","doi":"10.1109/ISDRS.2003.1272155","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272155","url":null,"abstract":"Schottky contacts to AlGaN are of great importance to its applications in micro- and optoelectronic devices. To characterize the dependence of interfacial properties on Schottky barrier formation in this material system we have used low energy cathodoluminescence spectroscopy (CLS), secondary ion mass spectrometry (SIMS), internal photoemission spectroscopy (IPE), and I-V measurements to correlate the local chemistry of the Ni/AlGaN interfaces with the CLS electronic properties and the IPE/I-V electrical properties as a function of thermal, wet, and UV-ozone processing conditions. Ni/Al/sub 0.32/Ga/sub 0.68/N contacts has showed that diodes processed by UV-ozone cleaning with a buffered HF dip removes the resulting oxide and exhibits Schottky barrier heights (1.5-1.53 eV) greater than those for diodes processed by UV-ozone only or buffered HF only (1.36-1.44 eV). Annealing the diodes at 325/spl deg/C and 425/spl deg/C in ultra-high vacuum increases the Schottky barrier height in the order of 0.1 eV-0.25 eV to values greater than or equal to the barrier heights measured on the UV-ozone+buffered HF processed diodes. Similar increase with annealing in the Ni/AlGaN Schottky barrier height as measured by C-V have also been reported. The obtained results highlights the key role of initial surface chemistry and thermal annealing on the Ni Schottky barrier height in the AlGaN material system.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"2 2","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114011046","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Characterization of charge trapping in SiO/sub 2//HfO/sub 2/ dielectrics SiO/ sub2 //HfO/ sub2 /介质中电荷俘获的表征
International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272115
R. Degraeve, A. Kerber, E. Cartier, L. Pantisano, G. Groeseneken
{"title":"Characterization of charge trapping in SiO/sub 2//HfO/sub 2/ dielectrics","authors":"R. Degraeve, A. Kerber, E. Cartier, L. Pantisano, G. Groeseneken","doi":"10.1109/ISDRS.2003.1272115","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272115","url":null,"abstract":"The techniques for characterizing HfO/sub 2/ charge traps are summarized in this paper. A defect band is present in the HfO/sub 2/ layer and located above the Si conduction band. This band can be efficiently charged and discharged by applying positive or negative gate bias respectively. The effect of the defect band can be observed by I/sub D/-V/sub G/ characteristic. It is concluded from experiments that only the electron fluence controls the trapping, while the detrapping is controlled by oxide field in combination with the lattice temperature. Charge pumping is proven to be a suitable technique to measure the charge trapping in SiO/sub 2//HfO/sub 2/ stacks. The trap density can be scanned by varying the gate pulse amplitude or in distance from the Si/SiO/sub 2/ interface by varying the pulse frequency.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"2013 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114881472","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Growth properties of self-assembled InAs quantum dots on a thin tensile-strained layer 自组装InAs量子点在薄拉伸应变层上的生长特性
International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272070
Jin Soo Kim, Jin Hong Lee, S. Hong, W. Han, H. Kwack, D. Oh
{"title":"Growth properties of self-assembled InAs quantum dots on a thin tensile-strained layer","authors":"Jin Soo Kim, Jin Hong Lee, S. Hong, W. Han, H. Kwack, D. Oh","doi":"10.1109/ISDRS.2003.1272070","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272070","url":null,"abstract":"The introduction of a thin tensile-strained GaAs and In/sub 0.32/ Ga/sub 0.68/As right below the QD layer modulates the structural and optical properties of self-assembled InAs QDs embedded in an InAlGaAs matrix. The AFM images indicated that the average size of InAs QDs on GaAs/InAlGaAs is decreased compared to that without the thin GaAs layer, but ones on In/sub 0.32/Ga/sub 0.68/As/InAlGaAs are increased with more isotropic shape.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"13 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121807016","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
A novel SONOS nonvolatile flash memory device using hot hole injection for write and tunneling to/from gate for erase 一种新型的SONOS非易失性闪存器件，使用热孔注入进行写入和隧道进出栅极进行擦除
International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272073
Y. Wang, Y. Zhao, B. Khan, C. Doherty, J. Krayer, M. White
{"title":"A novel SONOS nonvolatile flash memory device using hot hole injection for write and tunneling to/from gate for erase","authors":"Y. Wang, Y. Zhao, B. Khan, C. Doherty, J. Krayer, M. White","doi":"10.1109/ISDRS.2003.1272073","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272073","url":null,"abstract":"A novel SONOS (polysilicon-oxide-nitride-oxide-silicon) nonvolatile flash memory device which uses hot hole injection through the bottom oxide for write and tunneling to/from the gate through a thin top oxide for erase, with reduced power consumption, improved retention and subthreshold swing is proposed. The dynamic characteristics along with comparisons to NROM technology, forward/reverse read I/sub DS/ /spl sim/ I/sub GS/ characteristics, programming speeds and retention of SONOS device at room temperature are discussed.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"45 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"131959711","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
A novel self-aligned gate-lost MOSFET process comparing high-/spl kappa/ candidates 一种新的自对准栅损耗MOSFET工艺，比较高/spl kappa/候选器件
International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272191
C. O. Chui, H. Kim, J. Mcvittie, B. Triplett, P. McIntyre, K. Saraswat
{"title":"A novel self-aligned gate-lost MOSFET process comparing high-/spl kappa/ candidates","authors":"C. O. Chui, H. Kim, J. Mcvittie, B. Triplett, P. McIntyre, K. Saraswat","doi":"10.1109/ISDRS.2003.1272191","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272191","url":null,"abstract":"In this paper the two metal oxide dielectrics (ZrO/sub 2/ and HfO/sub 2/) deposited in the same chamber with the same technique using a newly developed self-aligned gate-last MOSFET process are compared. The compared results suggested that using either ZrO/sub 2/ or HfO/sub 2/ would provide similar on-to-off current ratio at a given device size.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"19 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132246850","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 2
Deep ultraviolet emission in AlGaN-based quantum wells on bulk AlN substrates 大块AlN衬底上algan基量子阱的深紫外发射
International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272005
Q. Fareed, R. Jain, R. Gaska, G. Tamulaitis, I. Yilmaz, M. Shur, E. Kuokštis, A. Khan
{"title":"Deep ultraviolet emission in AlGaN-based quantum wells on bulk AlN substrates","authors":"Q. Fareed, R. Jain, R. Gaska, G. Tamulaitis, I. Yilmaz, M. Shur, E. Kuokštis, A. Khan","doi":"10.1109/ISDRS.2003.1272005","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272005","url":null,"abstract":"We studied the structural properties and optical properties of AlGaN-GaN multiple quantum wells (MQW) in a wide range of Al compositions form 45% to 100%. The characterisation by using X-ray, photoluminescence and atomic force microscopy techniques indicated high quality of the grown layers. The shortest emission wavelength measured in AlGaN-based MQWs is around 243 nm.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"53 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126597543","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Transit times of SiGe:C HBTs using non selective base epitaxy 采用非选择性基底外延的SiGe:C hbt的传输时间
International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272044
N. Zerounian
{"title":"Transit times of SiGe:C HBTs using non selective base epitaxy","authors":"N. Zerounian","doi":"10.1109/ISDRS.2003.1272044","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272044","url":null,"abstract":"The transit times of SiGe:C HBTs using a non selective base epitaxy are investigated at 300 K and low temperature. The transit times depending on base boron dose and activation anneal conditions are investigated. Because the current gain strongly increases at low temperature, we can analyze dynamic performances versus temperature. We separate every charging and transit times over the temperature, in order to provide a better understanding of the 300 K behavior and to open up the road to further frequency optimization.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"21 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130884871","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 6
Insulated gate III-N devices and ICs 绝缘栅极III-N器件和集成电路
International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1272152
G. Simin, V. Adivarahan, H. Fatima, S. Saygı, A. Koudymov, X. He, W. Shuai, S. Rai, J. Yang, M. Asif Khan, A. Tarakji, J. Deng, R. Gaska, M. Shur
{"title":"Insulated gate III-N devices and ICs","authors":"G. Simin, V. Adivarahan, H. Fatima, S. Saygı, A. Koudymov, X. He, W. Shuai, S. Rai, J. Yang, M. Asif Khan, A. Tarakji, J. Deng, R. Gaska, M. Shur","doi":"10.1109/ISDRS.2003.1272152","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1272152","url":null,"abstract":"The MOSHFET design which combines the advantage of the MOS structure, which suppresses the gate leakage current, and an AlGaN/GaN heterointerface that provides high density, high mobility two-dimensional electron gas channel. This article presents a comparative review of the I-V characteristics, cut-off frequencies, RF output powers, power gain, and nonlinear distortions of AlGaN/GaN MOSHFET, and HFET device. The MOSHFETs possess significant advantages for the monolitic IC design. They sustain very high input impedance at elevated temperatures, even above 300 /spl deg/C. The results show that the MOSHFET based ICs are extremely promising for a large variety of high-power high-temperature applications.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"208 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"132829280","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
Preliminary study of As-for-Sb exchange for device applications As-for-Sb交换器件应用的初步研究
International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/ISDRS.2003.1271986
T. Sarmiento, G. May
{"title":"Preliminary study of As-for-Sb exchange for device applications","authors":"T. Sarmiento, G. May","doi":"10.1109/ISDRS.2003.1271986","DOIUrl":"https://doi.org/10.1109/ISDRS.2003.1271986","url":null,"abstract":"The role of the growth conditions in the As-for-Sb exchange reaction is discussed in this paper. Superlattices formed by As exposure of Sb-stabilized GaSb surfaces were grown to compare the resulting anion exchange under different conditions. Statistical experimental design was used to systematically evaluate the effect of different growth conditions. The experiments were performed on GaSb [001] epi-ready substrates in a Varian Gen-II solid source molecular beam epitaxy (MBE) system equipped with both As and Sb crackers. Reflection high-energy electron diffraction (RHEED) was used to monitor the surface reconstruction and to determine the growth rate. High resolution X-ray diffraction (HRXRD) was used to characterize the structures.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"412 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133237989","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 0
Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: reduced self-heating on DC and RF performance He注入制备的薄型SiGe虚拟衬底上应变硅场效应管:减少直流和射频性能的自热
International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI: 10.1109/isdrs.2003.1271992
T. Hackbarth, H. Herzog, K. Hieber, U. Konig, S. Mantl, B. Hollander, S. Lenk, H. von Kanel
{"title":"Strained silicon FETs on thin SiGe virtual substrates produced by He implantation: reduced self-heating on DC and RF performance","authors":"T. Hackbarth, H. Herzog, K. Hieber, U. Konig, S. Mantl, B. Hollander, S. Lenk, H. von Kanel","doi":"10.1109/isdrs.2003.1271992","DOIUrl":"https://doi.org/10.1109/isdrs.2003.1271992","url":null,"abstract":"In this work, MODFET layer stacks with a Ge fraction x=33% were grown by molecular beam epitaxy on thin virtual substrate (VS). A method has been developed to produce thin SRB (strain relieved buffer) SiGe layers (100-200 nm) using He implantation and subsequent annealing (750-900 /spl deg/C) to relax the strain of a pseudomorphic SiGe layer. The degree of relaxation was measured by high resolution X-ray diffraction. To assess the impact of self-heating, the output characteristics were recorded with an ACCENT Diva D225 system in the static and in the pulsed mode with 200 ns pulses at a duty cycle of 1:1000. The difference in the I/V curve between the static and the pulsed mode is much larger for the thick VS indicating enhanced self-heating. Finally, RF measurements up to 50 GHz were carried out on the two VS versions.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"24 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"127651410","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
引用次数: 1
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