A novel self-aligned gate-lost MOSFET process comparing high-/spl kappa/ candidates

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI:10.1109/ISDRS.2003.1272191

C. O. Chui, H. Kim, J. Mcvittie, B. Triplett, P. McIntyre, K. Saraswat

引用次数: 2

Abstract

In this paper the two metal oxide dielectrics (ZrO/sub 2/ and HfO/sub 2/) deposited in the same chamber with the same technique using a newly developed self-aligned gate-last MOSFET process are compared. The compared results suggested that using either ZrO/sub 2/ or HfO/sub 2/ would provide similar on-to-off current ratio at a given device size.

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一种新的自对准栅损耗MOSFET工艺，比较高/spl kappa/候选器件

本文采用一种新开发的自校准栅末场效应管工艺，对在同一腔内用相同工艺沉积的两种金属氧化物介质(ZrO/sub 2/和HfO/sub 2/)进行了比较。比较结果表明，在给定的器件尺寸下，使用ZrO/sub 2/或HfO/sub 2/将提供相似的通断电流比。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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International Semiconductor Device Research Symposium, 2003

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