大块AlN衬底上algan基量子阱的深紫外发射

International Semiconductor Device Research Symposium, 2003 Pub Date : 2003-12-10 DOI:10.1109/ISDRS.2003.1272005

Q. Fareed, R. Jain, R. Gaska, G. Tamulaitis, I. Yilmaz, M. Shur, E. Kuokštis, A. Khan

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摘要

我们研究了在45% ~ 100%铝成分范围内的AlGaN-GaN多量子阱(MQW)的结构性质和光学性质。利用x射线、光致发光和原子力显微镜技术对其进行了表征，表明其生长层的质量很高。在基于algan的mqw中测量到的最短发射波长约为243 nm。

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Deep ultraviolet emission in AlGaN-based quantum wells on bulk AlN substrates

We studied the structural properties and optical properties of AlGaN-GaN multiple quantum wells (MQW) in a wide range of Al compositions form 45% to 100%. The characterisation by using X-ray, photoluminescence and atomic force microscopy techniques indicated high quality of the grown layers. The shortest emission wavelength measured in AlGaN-based MQWs is around 243 nm.

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International Semiconductor Device Research Symposium, 2003

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