Jin Soo Kim, Jin Hong Lee, S. Hong, W. Han, H. Kwack, D. Oh
{"title":"自组装InAs量子点在薄拉伸应变层上的生长特性","authors":"Jin Soo Kim, Jin Hong Lee, S. Hong, W. Han, H. Kwack, D. Oh","doi":"10.1109/ISDRS.2003.1272070","DOIUrl":null,"url":null,"abstract":"The introduction of a thin tensile-strained GaAs and In/sub 0.32/ Ga/sub 0.68/As right below the QD layer modulates the structural and optical properties of self-assembled InAs QDs embedded in an InAlGaAs matrix. The AFM images indicated that the average size of InAs QDs on GaAs/InAlGaAs is decreased compared to that without the thin GaAs layer, but ones on In/sub 0.32/Ga/sub 0.68/As/InAlGaAs are increased with more isotropic shape.","PeriodicalId":369241,"journal":{"name":"International Semiconductor Device Research Symposium, 2003","volume":"13 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-12-10","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth properties of self-assembled InAs quantum dots on a thin tensile-strained layer\",\"authors\":\"Jin Soo Kim, Jin Hong Lee, S. Hong, W. Han, H. Kwack, D. Oh\",\"doi\":\"10.1109/ISDRS.2003.1272070\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The introduction of a thin tensile-strained GaAs and In/sub 0.32/ Ga/sub 0.68/As right below the QD layer modulates the structural and optical properties of self-assembled InAs QDs embedded in an InAlGaAs matrix. The AFM images indicated that the average size of InAs QDs on GaAs/InAlGaAs is decreased compared to that without the thin GaAs layer, but ones on In/sub 0.32/Ga/sub 0.68/As/InAlGaAs are increased with more isotropic shape.\",\"PeriodicalId\":369241,\"journal\":{\"name\":\"International Semiconductor Device Research Symposium, 2003\",\"volume\":\"13 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2003-12-10\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"International Semiconductor Device Research Symposium, 2003\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ISDRS.2003.1272070\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Semiconductor Device Research Symposium, 2003","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISDRS.2003.1272070","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth properties of self-assembled InAs quantum dots on a thin tensile-strained layer
The introduction of a thin tensile-strained GaAs and In/sub 0.32/ Ga/sub 0.68/As right below the QD layer modulates the structural and optical properties of self-assembled InAs QDs embedded in an InAlGaAs matrix. The AFM images indicated that the average size of InAs QDs on GaAs/InAlGaAs is decreased compared to that without the thin GaAs layer, but ones on In/sub 0.32/Ga/sub 0.68/As/InAlGaAs are increased with more isotropic shape.
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